STD10NF10
STD10NF10-1
N-channel 100V - 0.115Ω - 13A - DPAK - IPAK
Low gate charge STripFET™ II Power MOSFET
General features
Type
STD10NF10
STD10NF10-1
■
■
V
DSSS
100V
100V
R
DS(on)
<0.13Ω
<0.13Ω
I
D
13A
13A
3
1
2
1
3
Exceptional dv/dt capability
Application oriented characterization
DPAK
IPAK
Description
This MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC
converters for Telecom and Computer
applications. It is also intended for any
applications with low gate drive requirements.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
STD10NF10T4
STD10NF10-1
Marking
D10NF10
D10NF10
Package
DPAK
IPAK
Packaging
Tape & reel
Tube
August 2006
Rev 3
1/14
www.st.com
14
Contents
STD10NF10
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
4
5
6
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
STD10NF10
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM (1)
P
TOT
E
AS (2)
Absolute maximum ratings
Parameter
Drain-source voltage (V
GS
= 0)
Drain-gate voltage (R
GS
= 20KΩ)
Gate-source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
=100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
Single pulse avalanche energy
Value
100
100
± 20
13
9
52
50
0.33
70
9
-55 to 175
Max. operating junction temperature
Unit
V
V
V
A
A
A
W
W/°C
mJ
V/ns
°C
dv/dt
(3)
Peak diode recovery voltage slope
T
stg
T
J
Storage temperature
1. Pulse width limited by safe operating area
2. Starting T
J
= 25
o
C, I
D
= 15A, V
DD
= 50V
3. I
SD
≤
13A, di/dt
≤
300 A/µs, V
DS
≤
V
(BR)DSS
, T
J
≤
T
JMAX
Table 2.
Symbol
R
thJC
R
thJA
T
l
Thermal data
Parameter
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Value
3.0
100
300
Unit
°C/W
°C/W
°C
3/14
Electrical characteristics
STD10NF10
2
Electrical characteristics
(T
CASE
= 25°C unless otherwise specified)
Table 3.
Symbol
V
(BR)DSS
On /off states
Parameter
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 250µA, V
GS
= 0
V
DS
= Max rating
V
DS
= Max rating,
T
C
= 125°C
V
GS
= ±20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 5A
2
3
0.115
Min.
100
1
10
Typ.
Max.
Unit
V
µA
µA
I
DSS
I
GSS
V
GS(th)
R
DS(on)
±100
4
0.13
nA
V
Ω
Table 4.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Dynamic
Parameter
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
V
DS
= 15V
,
I
D
= 5A
V
DS
= 25V, f = 1 MHz,
V
GS
= 0
Min.
Typ.
20
460
70
30
15.3
3.7
4.7
21
Max.
Unit
S
pF
pF
pF
nC
nC
nC
V
DD
= 80V, I
D
= 10A
V
GS
= 10V
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 5.
Symbol
t
d(on)
t
r
t
d(off)
t
f
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V
DD
= 27V, I
D
= 5A,
R
G
= 4.7Ω, V
GS
= 10V
Figure 13 on page 8
Min.
Typ.
16
25
32
8
Max.
Unit
ns
ns
ns
ns
4/14
STD10NF10
Electrical characteristics
Table 6.
Symbol
I
SD
I
SDM (1)
V
SD(2)
t
rr
Q
rr
I
RRM
Source drain diode
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 10A, V
GS
= 0
I
SD
= 10A,
di/dt = 100A/µs,
V
DD
= 50V, T
J
= 150°C
Figure 15 on page 8
90
230
5
Test conditions
Min
Typ.
Max
13
52
1.5
Unit
A
A
V
ns
µC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
5/14
Embedded System
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