R1RW0408D datasheet, PDF - EEWORLD Datasheet

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R1RW0408D: Description4M High Speed SRAM (512-kword x 8-bit); File Size80KB，14 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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R1RW0408D Overview

4M High Speed SRAM (512-kword x 8-bit)

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R1RW0408D Series

4M High Speed SRAM (512-kword

8-bit)

REJ03C0111-0100Z

Rev. 1.00

Mar.12.2004

Description

The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword

8-bit. It has realized high

speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit

designing technology. It is most appropriate for the application which requires high speed, high density

memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0408D

is packaged in 400-mil 36-pin SOJ for high density surface mounting.

Features

•

Single supply: 3.3 V

0.3 V

•

Access time: 12 ns (max)

•

Completely static memory



No clock or timing strobe required

•

Equal access and cycle times

•

Directly TTL compatible



All inputs and outputs

•

Operating current: 100 mA (max)

•

TTL standby current: 40 mA (max)

•

CMOS standby current : 5 mA (max)

: 0.8 mA (max) (L-version)

•

Data retention current: 0.4 mA (max) (L-version)

•

Data retention voltage: 2 V (min) (L-version)

•

Center V

and V

type pin out

Rev.1.00, Mar.12.2004, page 1 of 12

R1RW0408D Related Products

	R1RW0408D	R1RW0408DGE-2LR	R1RW0408DGE-2PR
Description	4M High Speed SRAM (512-kword x 8-bit)	4M High Speed SRAM (512-kword x 8-bit)	4M High Speed SRAM (512-kword x 8-bit)
Is it lead-free?	-	Lead free	Lead free
Is it Rohs certified?	-	conform to	conform to
Parts packaging code	-	SOJ	SOJ
package instruction	-	SOJ, SOJ36,.44	SOJ, SOJ36,.44
Contacts	-	36	36
Reach Compliance Code	-	compli	compli
ECCN code	-	3A991.B.2.A	3A991.B.2.A
Maximum access time	-	12 ns	12 ns
I/O type	-	COMMON	COMMON
JESD-30 code	-	R-PDSO-J36	R-PDSO-J36
length	-	23.49 mm	23.49 mm
memory density	-	4194304 bi	4194304 bi
Memory IC Type	-	STANDARD SRAM	STANDARD SRAM
memory width	-	8	8
Humidity sensitivity level	-	2	2
Number of functions	-	1	1
Number of terminals	-	36	36
word count	-	524288 words	524288 words
character code	-	512000	512000
Operating mode	-	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	-	70 °C	70 °C
organize	-	512KX8	512KX8
Output characteristics	-	3-STATE	3-STATE
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	-	SOJ	SOJ
Encapsulate equivalent code	-	SOJ36,.44	SOJ36,.44
Package shape	-	RECTANGULAR	RECTANGULAR
Package form	-	SMALL OUTLINE	SMALL OUTLINE
Parallel/Serial	-	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	-	245	245
power supply	-	3.3 V	3.3 V
Certification status	-	Not Qualified	Not Qualified
Maximum seat height	-	3.55 mm	3.55 mm
Maximum standby current	-	0.0004 A	0.0004 A
Minimum standby current	-	2 V	2 V
Maximum slew rate	-	0.1 mA	0.1 mA
Maximum supply voltage (Vsup)	-	3.6 V	3.6 V
Minimum supply voltage (Vsup)	-	3 V	3 V
Nominal supply voltage (Vsup)	-	3.3 V	3.3 V
surface mount	-	YES	YES
technology	-	CMOS	CMOS
Temperature level	-	COMMERCIAL	COMMERCIAL
Terminal form	-	J BEND	J BEND
Terminal pitch	-	1.27 mm	1.27 mm
Terminal location	-	DUAL	DUAL
Maximum time at peak reflow temperature	-	20	20
width	-	10.16 mm	10.16 mm
Base Number Matches	-	1	1

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