UNISONIC TECHNOLOGIES CO., LTD
5N60
4.5 Amps, 600 Volts
N-CHANNEL MOSFET
1
Power MOSFET
DESCRIPTION
The UTC 5N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
TO-220
1
TO-220F
FEATURES
* R
DS(ON)
= 2.5Ω @V
GS
= 10 V
* Ultra low gate charge ( typical 15 nC )
* Low reverse transfer Capacitance ( C
RSS
= typical 6.5 pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
*Pb-free plating product number: 5N60L
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
5N60-TA3-T
5N60L-TA3-T
5N60-TF3-T
5N60L-TF3-T
Package
TO-220
TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
5N60L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) T: Tube
(2) TA3: TO-220, TF3: TO-220F
(3) L: Lead Free Plating Blank: Pb/Sn
,
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1 of 6
QW-R502-065,B
5N60
ABSOLUTE MAXIMUM RATING
(T
C
= 25℃ unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
V
GSS
I
AR
Power MOSFET
RATINGS
UNIT
Drain-Source Voltage
600
V
Gate-Source Voltage
±30
V
Avalanche Current (Note 1)
4.5
A
T
C
= 25℃
4.5
A
I
D
Continuous Drain Current
T
C
= 100℃
2.6
A
Pulsed Drain Current (Note 1)
I
DM
18
A
Avalanche Energy, Single Pulsed (Note 2)
E
AS
210
mJ
Avalanche Energy, Repetitive Limited by T
J(MAX)
E
AR
10
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
T
C
= 25℃
100
W
Power Dissipation
P
D
Derate above 25℃
0.8
W/℃
Junction Temperature
T
J
+150
℃
Operating and Storage Temperature
T
STG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
Case-to-Sink
SYMBOL
θ
JA
θ
JC
θ
CS
RATINGS
62.5
1.25
0.5
UNIT
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25℃ unless otherwise specified)
PARAMETER
Off Characteristics
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Breakdown Voltage Temperature
Coefficient
Gate-Body Leakage Current
Forward
Reverse
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
V
GS
=0V, I
D
= 250µA
V
DS
=600V, V
GS
= 0V
V
DS
=480V, T
C
= 125℃
MIN
600
1
10
0.6
100
-100
2.0
2.0
4.7
515
55
6.5
10
42
38
46
15
2.5
6.6
4.0
2.5
TYP MAX UNIT
V
µA
µA
V/℃
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
△
BV
DSS
/△
I
D
=250µA, Referenced to 25℃
T
J
V
GS
=30V, V
DS
= 0V
I
GSS
V
GS
=-30V, V
DS
= 0V
V
GS(TH)
R
DS(ON)
g
FS
C
ISS
C
OSS
C
RSS
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
V
DS
=V
GS
, I
D
= 250µA
V
GS
=10V, I
D
= 2.25A
V
DS
=40V, I
D
= 2.25A (Note 4)
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Delay Time
Turn-On
Rise Time
Delay Time
Turn-Off
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
670
72
8.5
30
90
85
100
19
V
DD
= 300V, I
D
=4.5 A,
R
G
= 25Ω (Note 4, 5)
V
DS
= 480 V, I
D
= 4.5A,
V
GS
= 10 V (Note 4, 5)
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2 of 6
QW-R502-065,B
5N60
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 4.5 A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode Forward
I
SM
Current
Reverse Recovery Time
t
RR
V
GS
= 0 V, I
S
= 4.5 A,
d
IF
/ dt = 100 A/µs (Note 4)
Reverse Recovery Charge
Q
RR
Note 1. Repetitive Rating : Pulse width limited by T
J
2. L = 18.9mH, I
AS
= 4.5 A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25℃
3. I
SD
≤
4.5A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25℃
4. Pulse Test : Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Power MOSFET
MIN
TYP MAX UNIT
1.4
4.5
18
300
2.2
V
A
A
ns
µC
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3 of 6
QW-R502-065,B
5N60
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
P.W.
Period
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv
/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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4 of 6
QW-R502-065,B
5N60
TEST CIRCUITS AND WAVEFORMS (Cont.)
R
L
V
DD
Power MOSFET
V
DS
V
GS
R
G
V
DS
90%
10V
Pulse Width
≤
1μs
Duty Factor
≤0.1%
D.U.T.
V
GS
10%
t
D(ON )
t
R
t
D (OFF)
t
F
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
50kΩ
12V
0.2μF
0.3μF
Same Type
as D.U.T.
10V
V
DS
Q
GS
Q
G
Q
GD
V
GS
DUT
3mA
V
G
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
V
DS
BV
DSS
R
D
V
DD
D.U.T.
10V
t
p
I
AS
t
p
Time
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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5 of 6
QW-R502-065,B
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