CMOS Low Voltage
2.5 Ω Dual SPDT Switch
ADG736L
FEATURES
1.8 V to 5.5 V single supply
2.5
Ω
(typical) on resistance
Low on-resistance flatness
Guaranteed leakage performance over −40°C to +85°C
−3 dB bandwidth > 200 MHz
Rail-to-rail operation
10-lead MSOP package
Fast switching times
t
ON
16 ns
t
OFF
8 ns
Typical power consumption (<0.01 μW)
TTL/CMOS compatible
FUNCTIONAL BLOCK DIAGRAM
ADG736L
S1A
2
S1B
9
IN1
1
S2A
4
S2B
7
IN2
5
SWITCHES SHOWN
FOR A LOGIC 1 INPUT
05485-001
10
D1
6
D2
Figure
1.
APPLICATIONS
USB 1.1 signal switching circuits
Cell phones
PDAs
Battery-powered systems
Communication systems
Sample-and-hold systems
Audio signal routing
Audio and video switching
Mechanical reed relay replacement
GENERAL DESCRIPTION
The ADG736L is a monolithic device comprising two independ-
ently selectable CMOS single pole, double throw (SPDT) switches.
The switches are designed using a submicron process that
provides low power dissipation, yet gives high switching speed,
low on resistance, low leakage currents, and wide input signal
bandwidth.
The on resistance profile is very flat over the full analog signal
range. This ensures excellent linearity and low distortion when
switching audio signals. Fast switching speed also makes the
part suitable for video signal switching.
The ADG736L operates from a single 1.8 V to 5.5 V supply,
making it ideally suited to portable and battery-powered
instruments.
Each switch conducts equally well in both directions when on;
each has an input signal range that extends to the power supplies.
The ADG736L exhibits break-before-make switching action.
The ADG736L is available in a 10-lead MSOP.
PRODUCT HIGHLIGHTS
1.
2.
3.
4.
5.
6.
1.8 V to 5.5 V Single-Supply Operation.
Guaranteed Leakage Performance.
Very Low R
ON
(4.5 Ω Maximum at 5 V,
8 Ω Maximum at 3 V).
Low On Resistance Flatness.
−3 dB Bandwidth > 200 MHz.
Low Power Dissipation.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
©2007 Analog Devices, Inc. All rights reserved.
ADG736L
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications....................................................................................... 1
General Description ......................................................................... 1
Functional Block Diagram .............................................................. 1
Product Highlights ........................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 5
ESD Caution.................................................................................. 5
Pin Configuration and Function Descriptions..............................6
Typical Performance Characteristics ..............................................7
Test Circuits........................................................................................9
Terminology .................................................................................... 10
Applications Information .............................................................. 11
Outline Dimensions ....................................................................... 12
Ordering Guide .......................................................................... 12
REVISION HISTORY
1/07—Revision 0: Initial Version
Rev. 0 | Page 2 of 12
ADG736L
SPECIFICATIONS
V
DD
= 5 V ± 10%, GND = 0 V; all specifications −40°C to +85°C, unless otherwise noted.
Table 1.
B Version
1
−40°C to
25°C
+85°C
0 V to V
DD
2.5
4
0.1
0.5
1.2
LEAKAGE CURRENTS
Source Off Leakage I
S
(OFF)
Channel On Leakage I
D
, I
S
(ON)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current, I
INL
or I
INH
0.005
±0.1
DYNAMIC CHARACTERISTICS
2
t
ON
t
OFF
Break-Before-Make Time Delay, t
D
Off Isolation
Channel-to-Channel Crosstalk
Bandwidth (–3 dB)
C
S
(OFF)
C
D
, C
S
(ON)
POWER REQUIREMENTS
I
DD
12
16
5
8
7
1
−62
−82
−62
−82
200
9
32
0.001
1.0
1
2
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (R
ON
)
On Resistance Match Between Channels (∆R
ON
)
On Resistance Flatness (R
FLAT (ON)
)
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
V min
V max
μA typ
μA max
ns typ
ns max
ns typ
ns max
ns typ
ns min
dB typ
dB typ
dB typ
dB typ
MHz typ
pF typ
pF typ
μA typ
μA max
Test Conditions/Comments
V
S
= 0 V to V
DD
, I
DS
=
−10
mA; see Figure
10
V
S
= 0 V to V
DD
, I
DS
=
−10
mA
V
S
= 0 V to V
DD
, I
DS
=
−10
mA
V
DD
= 5.5 V
4.5
0.4
±0.01
±0.1
±0.01
±0.1
V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V; see Figure
11
V
S
= V
D
= 1 V or 4.5 V; see Figure
12
±0.3
±0.3
2.4
0.8
V
IN
= V
INL
or V
INH
R
L
= 300 Ω, C
L
= 35 pF
V
S
= 3 V; see Figure
13
R
L
= 300 Ω, C
L
= 35 pF
V
S
= 3 V; see Figure
13
R
L
= 300 Ω, C
L
= 35 pF
V
S1
= V
S2
= 3 V; see Figure
14
R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure
15
R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure
16
R
L
= 50 Ω, C
L
= 5 pF; see Figure
17
V
DD
= 5.5 V
Digital inputs = 0 V or 5 V
Temperature range is −40°C to +85°C for the B version.
Guaranteed by design; not subject to production test.
Rev. 0 | Page 3 of 12
ADG736L
V
DD
= 3 V ± 10%, GND = 0 V. All specifications
−40°C
to +85°C, unless otherwise noted.
Table 2.
B Version
1
−40°C to
+85°C
0 V to V
DD
5.5
8
0.4
2.5
±0.01
±0.1
Channel On Leakage I
D
, I
S
(ON)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current, I
INL
or I
INH
0.005
±0.1
DYNAMIC CHARACTERISTICS
t
ON
t
OFF
Break-Before-Make Time Delay, t
D
Off Isolation
Channel-to-Channel Crosstalk
Bandwidth (−3 dB)
C
S
(OFF)
C
D
, C
S
(ON)
POWER REQUIREMENTS
I
DD
2
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (R
ON
)
On Resistance Match Between Channels (∆R
ON
)
On Resistance Flatness (R
FLAT (ON)
)
LEAKAGE CURRENTS
Source Off Leakage I
S
(OFF)
25°C
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
nA typ
Test Conditions/Comments
5
0.1
V
S
= 0 V to V
DD
, I
DS
= −10 mA; see Figure
10
V
S
= 0 V to V
DD
, I
DS
= −10 mA
V
S
= 0 V to V
DD
, I
DS
= −10 mA
V
DD
= 3.3 V
V
S
= 3 V/1 V, V
D
= 1 V/3 V; see Figure
11
V
S
= V
D
= 1 V or 3 V; see Figure
12
±0.3
±0.3
2.0
0.4
nA max
nA typ
nA max
V min
V max
μA typ
μA max
ns typ
R
L
= 300 Ω, C
L
= 35 pF
V
S
= 2 V; see Figure
13
R
L
= 300 Ω, C
L
= 35 pF
V
S
= 2 V; see Figure
13
R
L
= 300 Ω, C
L
= 35 pF
V
S1
= V
S2
= 2 V; see Figure
14
R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure
15
R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure
16
R
L
= 50 Ω, C
L
= 5 pF; see Figure
17
V
IN
= V
INL
or V
INH
±0.01
±0.1
14
20
6
10
7
1
−62
−82
−62
−82
200
9
32
0.001
1.0
ns max
ns typ
ns max
ns typ
ns min
dB typ
dB typ
dB typ
dB typ
MHz typ
pF typ
pF typ
V
DD
= 3.3 V
μA typ
μA max
Digital inputs = 0 V or 3 V
1
2
Temperature range is −40°C to +85°C for the B version.
Guaranteed by design; not subject to production test.
Rev. 0 | Page 4 of 12
ADG736L
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise noted.
Table 3.
Parameter
V
DD
to GND
Analog, Digital Inputs
1
Continuous Current, S or D
Peak Current, S or D
Operating Temperature Range
Industrial (B Version)
Storage Temperature Range
Junction Temperature
MSOP Package, Power Dissipation
θ
JA
Thermal Impedance
Lead Temperature (Soldering,
10 sec)
IR Reflow (Peak Temperature,
<20 sec)
Lead-Free Reflow
Peak Temperature
Time at Peak Temperature
ESD
1
Rating
−0.3
V to +6 V
−0.3
V to V
DD
+ 0.3 V or 30 mA,
whichever occurs first
30 mA
100 mA (Pulsed at 1 ms,
10% duty cycle maximum)
−40°C to +85°C
−65°C to +150°C
150°C
315 mW
205°C/W
300°C
235°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Only one absolute maximum rating may be applied at any one time.
ESD CAUTION
260(+0/−5)°C
10 sec to 40 sec
2 kV
Overvoltages at IN, S, or D are clamped by internal diodes. Current should be
limited to the maximum ratings given.
Rev. 0 | Page 5 of 12
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