ESA4UN3242-60JS-S datasheet, PDF

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ESA4UN3242-60JS-S: DescriptionEDO DRAM Module, 4MX32, 60ns, CMOS, PSMA72; Categorystorage storage; File Size117KB，7 Pages; ManufacturerFUJITSU; Websitehttp://edevice.fujitsu.com/fmd/en/index.html

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ESA4UN3242-60JS-S Overview

EDO DRAM Module, 4MX32, 60ns, CMOS, PSMA72

ESA4UN3242-60JS-S Parametric

Parameter Name	Attribute value
Maker	FUJITSU
Parts packaging code	SIMM
package instruction	SIMM, SSIM72
Contacts	72
Reach Compliance Code	unknown
Maximum access time	60 ns
I/O type	COMMON
JESD-30 code	R-PSMA-N72
memory density	134217728 bit
Memory IC Type	EDO DRAM MODULE
memory width	32
Number of terminals	72
word count	4194304 words
character code	4000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX32
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SIMM
Encapsulate equivalent code	SSIM72
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	5 V
Certification status	Not Qualified
refresh cycle	2048
Maximum seat height	25.4 mm
self refresh	NO
Maximum standby current	0.008 A
Maximum slew rate	0.84 mA
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	SINGLE
Base Number Matches	1

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October 1996

Revision 1.0

DATA SHEET

ESA4UN324(2/4)-(60/70)(J/T)(G/S)-S

16MByte (4M x 32) CMOS EDO DRAM Module

General Description

The ESA4UN324(2/4)-(60/70)(J/T)(G/S)-S is a high performance, EDO (Extended Data Out)16-megabyte dynamic RAM module

organized as 4M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. ESA4UN3242 supports

2K refresh. ESA4UN3244 supports 4K refresh.

The module utilizes eight, Fujitsu MB811(7/6)405A-(60/70)(PJ/FN) CMOS 4Mx4 EDO dynamic RAM in a surface mount package

on an epoxy laminate substrate. Each device is accompanied by a decoupling capacitor for improved noise immunity.

Control lines provided are such that byte control is possible.

Features

• High Density: 16MByte

• Fast Access Time of 60/70 ns (max.)

• Low Power:

Active (60/70 ns)

4.6/4.0 W (max.) - 2K

3.3/2.9 W (max.) - 4K

88mW (max.) - Standby (TTL)

44mW (max.) - Standby (CMOS)

• TTL-compatible inputs and outputs

• Separate power and ground planes

• Single power supply of 5V±10%

• Height: 1.00 inch.

ABSOLUTE MAXIMUM RATINGS

Item

Voltage on any pin relative to V

Power Dissipation

Operating Temperature

Storage Temperate

Short Circuit Output Current

Symbol

opr

stg

Ratings

-1 to +7.0

0 to +70

-55 to +125

-50 to +50

Unit

RECOMMENDED DC OPERATING CONDITIONS

= 0 to +70

°C)

Symbol

Parameter

Supply Voltage

Ground

Input High voltage

Input Low voltage

Min

4.5

2.4

-1

Typ

5.0

Max

5.5

0.8

Unit

Fujitsu Microelectronics, Inc.

ESA4UN3242-60JS-S Related Products

	ESA4UN3242-60JS-S	ESA4UN3244-70JG-S	ESA4UN3244-70TG-S	ESA4UN3244-70JS-S	ESA4UN3242-60TG-S	ESA4UN3242-60TS-S	ESA4UN3244-60TS-S	ESA4UN3244-60JG-S	ESA4UN3244-60TG-S	ESA4UN3242-70TS-S
Description	EDO DRAM Module, 4MX32, 60ns, CMOS, PSMA72	EDO DRAM Module, 4MX32, 70ns, CMOS, SIMM-72	EDO DRAM Module, 4MX32, 70ns, CMOS, SIMM-72	EDO DRAM Module, 4MX32, 70ns, CMOS, SIMM-72	EDO DRAM Module, 4MX32, 60ns, CMOS, PSMA72	EDO DRAM Module, 4MX32, 60ns, CMOS, SIMM-72	EDO DRAM Module, 4MX32, 60ns, CMOS, PSMA72	EDO DRAM Module, 4MX32, 60ns, CMOS, SIMM-72	EDO DRAM Module, 4MX32, 60ns, CMOS, PSMA72	EDO DRAM Module, 4MX32, 70ns, CMOS, PSMA72
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Maximum access time	60 ns	70 ns	70 ns	70 ns	60 ns	60 ns	60 ns	60 ns	60 ns	70 ns
JESD-30 code	R-PSMA-N72	R-XSMA-N72	R-XSMA-N72	R-XSMA-N72	R-PSMA-N72	R-XSMA-N72	R-PSMA-N72	R-XSMA-N72	R-PSMA-N72	R-PSMA-N72
memory density	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit
Memory IC Type	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE
memory width	32	32	32	32	32	32	32	32	32	32
Number of terminals	72	72	72	72	72	72	72	72	72	72
word count	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words
character code	4000000	4000000	4000000	4000000	4000000	4000000	4000000	4000000	4000000	4000000
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	4MX32	4MX32	4MX32	4MX32	4MX32	4MX32	4MX32	4MX32	4MX32	4MX32
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	PLASTIC/EPOXY	UNSPECIFIED	PLASTIC/EPOXY	UNSPECIFIED	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	2048	4096	4096	4096	2048	2048	4096	4096	4096	2048
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE

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