STP62NS04Z
N-channel clamped 12.5mΩ - 62A - TO-220
Fully protected MESH OVERLAY™ Power MOSFET
General features
Type
STP62NS04Z
■
■
■
V
DSS
(@Tjmax)
Clamped
R
DS(on)
<0.015Ω
I
D
62A
100% avalanche tested
Low capacitance and gate charge
175° C maximum junction temperature
TO-220
1
2
3
Description
This fully clamped MOSFET is produced by using
the latest advanced Company’s Mesh Overlay
process which is based on a novel strip layout.
The inherent benefits of the new technology
coupled with the extra clamping capabilities make
this product particularly suitable for the harshest
operation conditions such as those encountered
in the automotive environment. Any other
application requiring extra ruggedness is also
recommended.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
STP62NS04Z
Marking
P62NS04Z
Package
TO-220
Packaging
Tube
October 2006
Rev 5
1/12
www.st.com
12
Contents
STP62NS04Z
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
4
5
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STP62NS04Z
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
DS
V
GS
I
D
I
D
I
DG
I
GS
I
DM(1)
P
TOT
dv/dt
(2)
E
AS (3)
V
ESD
T
J
T
stg
Absolute maximum ratings
Parameter
Drain-source voltage (V
GS
= 0)
Gate-source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
=100°C
Drain gate current (continuous)
Gate sourcecurrent (continuous)
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
Peak diode recovery voltage slope
Single Pulse Avalanche Energy
ESD (HBM - C = 100pF, R = 1.5 kΩ)
Operating junction temperature
Storage temperature
Value
Clamped
Clamped
62
37.5
± 50
± 50
248
110
0.74
8
500
8
-55 to 175
A
W
W/°C
V/ns
mJ
V
°C
Unit
V
V
A
A
1. Pulse width limited by safe operating area
2. I
SD
≤
40A, di/dt
≤
100A/µs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
3.
Starting T
J
= 25
o
C, I
D
= 20A, V
DD
= 20V
Table 2.
Symbol
R
thJC
R
thJA
T
l
Thermal data
Parameter
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Value
1.36
62.5
300
Unit
°C/W
°C/W
°C
3/12
Electrical characteristics
STP62NS04Z
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GSS
V
GS(th)
R
DS(on)
On/off states
Parameter
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate-Source
Breakdown Voltage
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 1mA, V
GS
= 0
V
DS
= 16V
V
GS
= ±10V
I
GS
= 100 µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 30A
18
2
12.5
4
15
Min.
33
10
10
Typ.
Max.
Unit
V
µA
µA
V
V
mΩ
Table 4.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Dynamic
Parameter
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
V
DS
= 15V, I
D
= 30A
V
DS
=25V, f = 1 MHz,
V
GS
= 0
Min.
Typ.
20
1330
420
135
34
10
11.5
47
Max.
Unit
S
pF
pF
pF
nC
nC
nC
V
DD
= 20V, I
D
= 40A
V
GS
=10V
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 5.
Symbol
t
d(on)
t
r
t
d(off)
t
f
t
r(Voff)
t
f
t
c
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Off-voltage rise time
Fall time
Cross-over time
Test conditions
V
DD
= 20V, I
D
= 20A,
R
G
=4.7Ω, V
GS
= 10V
Figure 13 on page 8
V
clamp
= 30V, I
D
= 40A
R
G
= 4.7Ω, V
GS
= 10V
Figure 13 on page 8
Min.
Typ.
13
104
41
42
30
54
90
Max.
Unit
ns
ns
ns
ns
ns
ns
ns
4/12
STP62NS04Z
Electrical characteristics
Table 6.
Symbol
I
SD
I
SDM(1)
V
SD(2)
t
rr
Q
rr
I
RRM
Source drain diode
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 62A, V
GS
= 0
I
SD
= 40A,
di/dt = 100A/µs,
V
DD
= 20V, T
J
= 150°C
Figure 15 on page 8
45
65
2.9
Test conditions
Min
Typ.
Max
62
248
1.5
Unit
A
A
V
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
5/12
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