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P80NF12

Description
80 A, 120 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size220KB,12 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric Compare View All

P80NF12 Overview

80 A, 120 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

P80NF12 Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage120 V
Processing package descriptionROHS COMPLIANT, TO-220, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingtin
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Shell connectionDRAIN
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current80 A
Rated avalanche energy700 mJ
Maximum drain on-resistance0.0180 ohm
Maximum leakage current pulse320 A
STP80NF12
N-channel 120V - 0.013Ω - 80A - TO-220
STripFET™ II Power MOSFET
General features
Type
STP80NF12
V
DSS
(@Tjmax)
120V
R
DS(on)
<0.018Ω
I
D
80A
(1)
Exceptional dv/dt capability
100% avalanche tested
Application oriented characterization
TO-220
3
1
2
Description
This MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC
converters for Telecom and Computer
applications. It is also intended for any
applications with low gate drive requirements.
Internal schematic diagram
Applications
Switching application
Order codes
Part number
STP80NF12
Marking
P80NF12
Package
TO-220
Packaging
Tube
January 2007
Rev 4
1/12
www.st.com
12

P80NF12 Related Products

P80NF12 STP80NF12_07
Description 80 A, 120 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 80 A, 120 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Number of terminals 3 3
Minimum breakdown voltage 120 V 120 V
Processing package description ROHS COMPLIANT, TO-220, 3 PIN ROHS COMPLIANT, TO-220, 3 PIN
Lead-free Yes Yes
EU RoHS regulations Yes Yes
state ACTIVE ACTIVE
packaging shape Rectangle Rectangle
Package Size Flange mounting Flange mounting
Terminal form THROUGH-hole THROUGH-hole
terminal coating tin tin
Terminal location single single
Packaging Materials Plastic/Epoxy Plastic/Epoxy
structure Single WITH BUILT-IN diode Single WITH BUILT-IN diode
Shell connection DRAIN DRAIN
Number of components 1 1
transistor applications switch switch
Transistor component materials silicon silicon
Channel type N channel N channel
field effect transistor technology Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT
Transistor type universal power supply universal power supply
Maximum leakage current 80 A 80 A
Rated avalanche energy 700 mJ 700 mJ
Maximum drain on-resistance 0.0180 ohm 0.0180 ohm
Maximum leakage current pulse 320 A 320 A
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