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AO4420L

Description
N-Channel Enhancement Mode Field Effect Transistor
File Size184KB,7 Pages
ManufacturerETC
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AO4420L Overview

N-Channel Enhancement Mode Field Effect Transistor

Rev 4: Nov 2004
AO4420, AO4420L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4420 uses advanced trench technology to
provide excellent R
DS(ON)
, shoot-through immunity and
body diode characteristics.This device is suitable for
use as a synchronous switch in PWM applications.
AO4420L is offered in a lead-free package. AO4420L
( Green Product ) is offered in a lead-free package.
Features
V
DS
(V) = 30V
I
D
= 13.7A
R
DS(ON)
< 10.5mΩ (V
GS
= 10V)
R
DS(ON)
< 12mΩ (V
GS
= 4.5V)
D
S
S
S
G
D
D
D
D
G
S
SOIC-8
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
T
A
=25°C
A
Current
I
D
T
A
=70°C
Pulsed Drain Current
B
I
DM
T
A
=25°C
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
P
D
T
J
, T
STG
Maximum
30
±12
13.7
9.7
60
3.1
2
-55 to 150
Units
V
V
A
W
°C
Symbol
t
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
28
54
21
Max
40
75
30
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.

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Description N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor
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