Rev 4: Nov 2004
AO4420, AO4420L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4420 uses advanced trench technology to
provide excellent R
DS(ON)
, shoot-through immunity and
body diode characteristics.This device is suitable for
use as a synchronous switch in PWM applications.
AO4420L is offered in a lead-free package. AO4420L
( Green Product ) is offered in a lead-free package.
Features
V
DS
(V) = 30V
I
D
= 13.7A
R
DS(ON)
< 10.5mΩ (V
GS
= 10V)
R
DS(ON)
< 12mΩ (V
GS
= 4.5V)
D
S
S
S
G
D
D
D
D
G
S
SOIC-8
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
T
A
=25°C
A
Current
I
D
T
A
=70°C
Pulsed Drain Current
B
I
DM
T
A
=25°C
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
P
D
T
J
, T
STG
Maximum
30
±12
13.7
9.7
60
3.1
2
-55 to 150
Units
V
V
A
W
°C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
28
54
21
Max
40
75
30
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO4420, AO4420L
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=12.7A
Forward Transconductance
V
DS
=5V, I
D
=13.7A
Diode Forward Voltage
I
S
=1A,V
GS
=0V
Maximum Body-Diode Continuous Current
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
= ±12V
V
DS
=V
GS
I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, ID=13.7A
T
J
=125°C
30
0.6
40
8.3
12.5
9.7
37
0.76
10.5
15
12
1
5
3656
256
168
0.86
30.5
4.6
8.6
5.5
3.4
49.8
5.9
22.5
12.5
4050
1.1
Min
30
0.004
1
5
100
2
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
R
g
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
1.1
36
SWITCHING PARAMETERS
Q
g
(4.5V) Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
Gate Drain Charge
t
D(on)
Turn-On DelayTime
t
r
Turn-On Rise Time
t
D(off)
Turn-Off DelayTime
t
f
Turn-Off Fall Time
t
rr
Body Diode Reverse Recovery Time
Q
rr
Body Diode Reverse Recovery Charge
V
GS
=10V, V
DS
=15V, I
D
=13.7A
V
GS
=10V, V
DS
=15V, R
L
=1.1Ω,
R
GEN
=0Ω
I
F
=13.7A, dI/dt=100A/µs
I
F
=13.7A, dI/dt=100A/µs
9
7
75
11
28
16
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value
in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4420, AO4420L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
I
D
(A)
I
D
(A)
30
20
10
0
0
1
2
3
4
5
V
DS
(Volts)
Figure 1: On-Regions Characteristi
cs
V
GS
=2.0V
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
(Volts)
Figure 2: Transfer Characteristics
V
GS
=2.5V
30
V
GS
=5V
25
20
15
10
25°C
125°C
12
Normalize ON-Resistance
11
R
DS(ON)
(mΩ)
10
9
8
7
6
0
5
10
15
20
25
30
V
GS
=10V
1.8
I
D
=13.7A
V
GS
=4.5V
1.6
1.4
1.2
1.0
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
V
GS
=4.5V
V
GS
=10V
I
D(
A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
30
25
R
DS(ON)
(mΩ)
20
15
10
5
0
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
I
D
=13.7A
1E+01
1E+00
1E-01
I
S
(A)
1E-02
1E-03
1E-04
1E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
125°C
25°C
Alpha & Omega Semiconductor, Ltd.
AO4420, AO4420L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
V
GS
(Volt
s)
3
2
1
C
rss
0
0
10
20
30
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
100
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
V
DS
=15V
I
D
=13.7A
Capacitance (pF
)
10000
C
iss
1000
C
oss
100
R
DS(ON)
limited
10
I
D
(A)
10ms
1s
1
T
J(Max)
=150°C
T
A
=25°C
0.1
0.1
1
10
10s
DC
10µs
100µs
Power (W)
100
1ms
0.1s
50
40
30
20
10
0
0.01
0.1
1
10
100
1000
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area (Note E)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=40°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (S)
Figure 11: Normalized Maximum Transient Thermal Impedence
Alpha & Omega Semiconductor, Ltd.
Document No.
PD-00139
ALPHA & OMEGA
SEMICONDUCTOR, LTD.
Version
Title
rev C
AO4420 Marking Description
SO-8 PACKAGE MARKING DESCRIPTION
Standard product
Green product
NOTE:
LOGO
4420
F&A
Y
W
LT
- AOS LOGO
- PART NUMBER CODE.
- FOUNDRY AND ASSEMBLY LOCATION
- YEAR CODE
- WEEK CODE.
- ASSEMBLY LOT CODE
PART NO. DESCRIPTION
AO4420
AO4420L
Standard product
Green product
CODE
4420
4420
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