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MJD340

Description
POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size340KB,5 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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MJD340 Overview

POWER TRANSISTOR

MJD340 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeTO-252
package instructionDPAK-2/3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)15 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
®
MJD340
MJD350
COMPLEMENTARY SILICON POWER TRANSISTORS
s
s
s
s
s
STMicroelectronics PREFERRED
SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
MEDIUM VOLTAGE CAPABILITY
SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
ELECTRICAL SIMILAR TO MJE340 AND
MJE350
3
1
DPAK
TO-252
(Suffix "T4")
APPLICATIONS
s
SOLENOID/RELAY DRIVERS
s
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
DESCRIPTION
The MJD340 and MJD350 form complementary
NPN - PNP pairs.
They are manufactured using Medium Voltage
Epitaxial-Planar technology, resulting in a rugged
high performance cost-effective transistor.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
NPN
PNP
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (IC = 0)
Collector Current
o
Collector Peak Current (tp = 25 C)
Total Power Dissipation at T
case
25
o
C
Storage Temperature
Max Operating Junction Temperature
Value
MJD340
MJD350
300
300
3
0.5
0.75
15
-65 to 150
150
V
V
V
A
A
W
o
o
Unit
C
C
For PNP types voltage and current values are negative.
September 2003
1/5

MJD340 Related Products

MJD340 MJD340_03 MJD350
Description POWER TRANSISTOR POWER TRANSISTOR POWER TRANSISTOR
Is it lead-free? Lead free - Lead free
Is it Rohs certified? conform to - conform to
Maker STMicroelectronics - STMicroelectronics
Parts packaging code TO-252 - TO-252
package instruction DPAK-2/3 - DPAK-2/3
Contacts 3 - 3
Reach Compliance Code compli - compli
ECCN code EAR99 - EAR99
Shell connection COLLECTOR - COLLECTOR
Maximum collector current (IC) 0.5 A - 0.5 A
Collector-emitter maximum voltage 300 V - 300 V
Configuration SINGLE - SINGLE
Minimum DC current gain (hFE) 30 - 30
JEDEC-95 code TO-252 - TO-252
JESD-30 code R-PSSO-G2 - R-PSSO-G2
JESD-609 code e3 - e3
Humidity sensitivity level 1 - 1
Number of components 1 - 1
Number of terminals 2 - 2
Maximum operating temperature 150 °C - 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 - 260
Polarity/channel type NPN - PNP
Maximum power dissipation(Abs) 15 W - 15 W
Certification status Not Qualified - Not Qualified
surface mount YES - YES
Terminal surface Matte Tin (Sn) - Matte Tin (Sn)
Terminal form GULL WING - GULL WING
Terminal location SINGLE - SINGLE
Maximum time at peak reflow temperature 30 - 30
transistor applications SWITCHING - SWITCHING
Transistor component materials SILICON - SILICON
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