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MJD340_03

Description
POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size340KB,5 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric Compare View All

MJD340_03 Overview

POWER TRANSISTOR

MJD340_03 Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeGENERAL PURPOSE POWER
®
MJD340
MJD350
COMPLEMENTARY SILICON POWER TRANSISTORS
s
s
s
s
s
STMicroelectronics PREFERRED
SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
MEDIUM VOLTAGE CAPABILITY
SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
ELECTRICAL SIMILAR TO MJE340 AND
MJE350
3
1
DPAK
TO-252
(Suffix "T4")
APPLICATIONS
s
SOLENOID/RELAY DRIVERS
s
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
DESCRIPTION
The MJD340 and MJD350 form complementary
NPN - PNP pairs.
They are manufactured using Medium Voltage
Epitaxial-Planar technology, resulting in a rugged
high performance cost-effective transistor.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
NPN
PNP
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (IC = 0)
Collector Current
o
Collector Peak Current (tp = 25 C)
Total Power Dissipation at T
case
25
o
C
Storage Temperature
Max Operating Junction Temperature
Value
MJD340
MJD350
300
300
3
0.5
0.75
15
-65 to 150
150
V
V
V
A
A
W
o
o
Unit
C
C
For PNP types voltage and current values are negative.
September 2003
1/5

MJD340_03 Related Products

MJD340_03 MJD340 MJD350
Description POWER TRANSISTOR POWER TRANSISTOR POWER TRANSISTOR
Is it lead-free? - Lead free Lead free
Is it Rohs certified? - conform to conform to
Maker - STMicroelectronics STMicroelectronics
Parts packaging code - TO-252 TO-252
package instruction - DPAK-2/3 DPAK-2/3
Contacts - 3 3
Reach Compliance Code - compli compli
ECCN code - EAR99 EAR99
Shell connection - COLLECTOR COLLECTOR
Maximum collector current (IC) - 0.5 A 0.5 A
Collector-emitter maximum voltage - 300 V 300 V
Configuration - SINGLE SINGLE
Minimum DC current gain (hFE) - 30 30
JEDEC-95 code - TO-252 TO-252
JESD-30 code - R-PSSO-G2 R-PSSO-G2
JESD-609 code - e3 e3
Humidity sensitivity level - 1 1
Number of components - 1 1
Number of terminals - 2 2
Maximum operating temperature - 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - 260 260
Polarity/channel type - NPN PNP
Maximum power dissipation(Abs) - 15 W 15 W
Certification status - Not Qualified Not Qualified
surface mount - YES YES
Terminal surface - Matte Tin (Sn) Matte Tin (Sn)
Terminal form - GULL WING GULL WING
Terminal location - SINGLE SINGLE
Maximum time at peak reflow temperature - 30 30
transistor applications - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON
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