Excelics
DATA SHEET
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•
•
•
•
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HERMETIC 100mil CERAMIC FLANGE PACKAGE
+26.0dBm TYPICAL OUTPUT POWER
7.5dB TYPICAL POWER GAIN AT 12GHz
0.3 X 800 MICRON RECESSED “MUSHROOM”
GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
O
EFA080A-100F
Low Distortion GaAs Power FET
5DG
'LD
*
'
7<3
7<3
All Dimensions In mils
ELECTRICAL CHARACTERISTICS (T
a
= 25 C)
SYMBOLS
P
1dB
G
1dB
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
Saturated Drain Current
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=2.0mA
-12
-7
MIN
24.0
6.0
TYP
26.0
7.5
32
130
90
210
120
-2.0
-15
-14
58*
o
MAX
UNIT
dBm
dB
%
300
mA
mS
-3.5
V
V
V
C/W
Drain Breakdown Voltage Igd=1.0mA
Source Breakdown Voltage Igs=1.0mA
Thermal Resistance
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Drain-Source Voltage
12V
8V
Vds
Gate-Source Voltage
-8V
-4V
Vgs
Drain Current
Idss
250mA
Ids
Forward Gate Current
20mA
4mA
Igsf
Input Power
25dBm
@ 3dB Compression
Pin
o
Channel Temperature
175 C
150
o
C
Tch
Storage Temperature
-65/175
o
C
-65/150
o
C
Tstg
Total Power Dissipation
2.5 W
2.0W
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EFA080A-100F
DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
FREQ
(GHz)
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
--- S11 ---
MAG ANG
0.959 -47.5
0.898 -81.6
0.854 -104.9
0.817 -126.2
0.785 -147.2
0.761 -163.3
0.738 179.2
0.718 163.2
0.731 140.3
0.753 125.5
0.742 121.7
0.707 115.5
0.709
96.7
0.708
77.6
0.680
65.4
0.658
53.2
0.664
42.2
0.654
33.6
0.623
26.4
0.697
15.6
8V, 1/2 Idss
--- S21 ---
--- S12 ---
MAG ANG MAG ANG
6.007 149.5 0.028
54.7
5.050 119.7 0.042
38.4
4.182
97.3 0.050
26.7
3.635
78.0 0.054
17.3
3.268
59.5 0.059
8.8
2.964
42.1 0.063
1.0
2.690
24.1 0.065
-8.3
2.414
6.9 0.064 -16.5
2.132 -10.6 0.064 -24.6
1.913 -26.3 0.067 -31.4
1.826 -41.3 0.074 -39.8
1.752 -56.8 0.083 -47.6
1.655 -72.8 0.093 -57.3
1.567 -90.4 0.106 -69.1
1.509 -110.8 0.125 -85.0
1.419 -130.8 0.144 -99.9
1.354 -148.0 0.173 -111.8
1.316 -167.6 0.223 -127.5
1.216 171.4 0.277 -146.8
1.201 151.3 0.380 -167.1
--- S22 ---
MAG
ANG
0.450
-32.8
0.446
-53.9
0.442
-68.6
0.442
-80.0
0.426
-89.3
0.378 -104.4
0.357 -124.2
0.366 -145.0
0.395 -150.2
0.401 -158.8
0.403 178.4
0.430 162.0
0.425 160.0
0.375 151.1
0.394 120.4
0.436 102.6
0.430 103.8
0.436
97.7
0.500
80.0
0.566
72.0
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