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STB36NF06L

Description
30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size418KB,14 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Download user manual Parametric Compare View All

STB36NF06L Overview

30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

STB36NF06L Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)225 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)30 A
Maximum drain current (ID)30 A
Maximum drain-source on-resistance0.05 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)245
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)70 W
Maximum pulsed drain current (IDM)120 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
STP36NF06L
STB36NF06L
N-channel 60V - 0.032Ω - 30A - TO-220 - D
2
PAK
STripFET™ II Power MOSFET
General features
Type
STP36NF06L
STB36NF06L
V
DSS
60V
60V
R
DS(on)
< 0.04Ω
< 0.04Ω
I
D
30A
30A
3
1
2
Exceptional dv/dt capability
3
100% avalanche tested
Low threshold drive
1
D²PAK
TO-220
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Internal schematic diagram
Applications
Switching application
Order codes
Sales type
STP36NF06L
STB36NF06L
Marking
P36NF06L
B36NF06
Package
TO-220
D²PAK
Packaging
Tube
Tape & reel
June 2006
Rev 3
1/14
www.st.com
14

STB36NF06L Related Products

STB36NF06L B36NF06 P36NF06L
Description 30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Shell connection DRAIN DRAIN DRAIN
Number of components 1 1 1
Number of terminals 2 3 3
Terminal form GULL WING THROUGH-hole THROUGH-hole
Terminal location SINGLE single single
transistor applications SWITCHING switch switch
Transistor component materials SILICON silicon silicon
Minimum breakdown voltage - 60 V 60 V
Processing package description - TO-220, 3 PIN TO-220, 3 PIN
Lead-free - Yes Yes
EU RoHS regulations - Yes Yes
state - ACTIVE ACTIVE
packaging shape - Rectangle Rectangle
Package Size - Flange mounting Flange mounting
terminal coating - tin tin
Packaging Materials - Plastic/Epoxy Plastic/Epoxy
structure - Single WITH BUILT-IN diode Single WITH BUILT-IN diode
Channel type - N channel N channel
field effect transistor technology - Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR
operating mode - ENHANCEMENT ENHANCEMENT
Transistor type - universal power supply universal power supply
Maximum leakage current - 30 A 30 A
Rated avalanche energy - 225 mJ 225 mJ
Maximum drain on-resistance - 0.0500 ohm 0.0500 ohm
Maximum leakage current pulse - 120 A 120 A
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