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P36NF06L

Description
30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size418KB,14 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric Compare View All

P36NF06L Overview

30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

P36NF06L Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage60 V
Processing package descriptionTO-220, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingtin
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Shell connectionDRAIN
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current30 A
Rated avalanche energy225 mJ
Maximum drain on-resistance0.0500 ohm
Maximum leakage current pulse120 A
STP36NF06L
STB36NF06L
N-channel 60V - 0.032Ω - 30A - TO-220 - D
2
PAK
STripFET™ II Power MOSFET
General features
Type
STP36NF06L
STB36NF06L
V
DSS
60V
60V
R
DS(on)
< 0.04Ω
< 0.04Ω
I
D
30A
30A
3
1
2
Exceptional dv/dt capability
3
100% avalanche tested
Low threshold drive
1
D²PAK
TO-220
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Internal schematic diagram
Applications
Switching application
Order codes
Sales type
STP36NF06L
STB36NF06L
Marking
P36NF06L
B36NF06
Package
TO-220
D²PAK
Packaging
Tube
Tape & reel
June 2006
Rev 3
1/14
www.st.com
14

P36NF06L Related Products

P36NF06L B36NF06 STB36NF06L
Description 30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Number of terminals 3 3 2
Terminal form THROUGH-hole THROUGH-hole GULL WING
Terminal location single single SINGLE
Shell connection DRAIN DRAIN DRAIN
Number of components 1 1 1
transistor applications switch switch SWITCHING
Transistor component materials silicon silicon SILICON
Minimum breakdown voltage 60 V 60 V -
Processing package description TO-220, 3 PIN TO-220, 3 PIN -
Lead-free Yes Yes -
EU RoHS regulations Yes Yes -
state ACTIVE ACTIVE -
packaging shape Rectangle Rectangle -
Package Size Flange mounting Flange mounting -
terminal coating tin tin -
Packaging Materials Plastic/Epoxy Plastic/Epoxy -
structure Single WITH BUILT-IN diode Single WITH BUILT-IN diode -
Channel type N channel N channel -
field effect transistor technology Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR -
operating mode ENHANCEMENT ENHANCEMENT -
Transistor type universal power supply universal power supply -
Maximum leakage current 30 A 30 A -
Rated avalanche energy 225 mJ 225 mJ -
Maximum drain on-resistance 0.0500 ohm 0.0500 ohm -
Maximum leakage current pulse 120 A 120 A -
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