DTD114EL-AE3-R datasheet, PDF - EEWORLD Datasheet

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DTD114EL-AE3-R: DescriptionNPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS); CategoryDiscrete semiconductor The transistor; File Size200KB，3 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/; Environmental Compliance

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DTD114EL-AE3-R Overview

NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)

DTD114EL-AE3-R Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	UNISONIC TECHNOLOGIES CO.,LTD
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	56
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

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UNISONIC TECHNOLOGIES CO., LTD

DTD114E

NPN DIGITAL TRANSISTOR

(BUILT- IN BIAS RESISTORS)

FEATURES

* Built-in bias resistors that implies easy ON/OFF applications.

* The bias resistors are thin-film resistors with complete isolation to

allow negative input.

NPN SILICON TRANSISTOR

EQUIVALENT CIRCUIT

*Pb-free plating product number:DTD114EL

ORDERING INFORMATION

Order Number

Normal

Lead Free Plating

DTD114E-AE3-R

DTD114EL-AE3-R

DTD114E-AL3-R

DTD114EL-AL3-R

Package

SOT-23

SOT-323

Pin Assignment

Packing

Tape Reel

MARKING

www.unisonic.com.tw

1 of 3

QW-R206-043,B

DTD114EL-AE3-R Related Products

	DTD114EL-AE3-R	DTD114E	DTD114E-AL3-R	DTD114E-AE3-R	DTD114EL-AL3-R
Description	NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)	NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)	NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)	NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)	NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)
package instruction	SMALL OUTLINE, R-PDSO-G3	-	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	-	3	3	3
Reach Compliance Code	compli	-	compli	compli	compli
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1	-	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.5 A	-	0.5 A	0.5 A	0.5 A
Configuration	SINGLE WITH BUILT-IN RESISTOR	-	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	56	-	56	56	56
JESD-30 code	R-PDSO-G3	-	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	-	1	1	1
Number of terminals	3	-	3	3	3
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	-	NPN	NPN	NPN
surface mount	YES	-	YES	YES	YES
Terminal form	GULL WING	-	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	-	DUAL	DUAL	DUAL
transistor applications	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	-	200 MHz	200 MHz	200 MHz

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