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MPS4126_06

Description
Amplifier Transistor PNP Silicon
File Size30KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MPS4126_06 Overview

Amplifier Transistor PNP Silicon

ON Semiconductort
Amplifier Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCE
VCB
VEB
IC
PD
PD
TJ, Tstg
Value
–25
–25
–4.0
–200
625
5.0
1.5
12
–55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
MPS4126
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
2
BASE
1
EMITTER
COLLECTOR
3
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –1.0 mA, IB = 0)
Collector–Base Breakdown Voltage
(IC = –10
mA,
IE = 0)
Emitter–Base Breakdown Voltage
(IC = 0, IE = –10
mA)
Collector Cutoff Current
(VCB = –20 V, IE = 0)
Emitter Cutoff Current
(VEB = –3.0 V, IC = 0)
V(BR)CEO
–25
V(BR)CBO
–25
V(BR)EBO
–4.0
ICBO
IEBO
–50
–50
nAdc
nAdc
Vdc
Vdc
Vdc
©
Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 2
Publication Order Number:
MPS4126/D

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