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MPS4126

Description
Amplifier Transistor PNP Silicon
CategoryDiscrete semiconductor    The transistor   
File Size30KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MPS4126 Overview

Amplifier Transistor PNP Silicon

MPS4126 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-92
package instructionCASE 29-04, TO-226AA, 3 PIN
Contacts3
Manufacturer packaging codeCASE 29-04
Reach Compliance Code_compli
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)170 MHz
Base Number Matches1
ON Semiconductort
Amplifier Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCE
VCB
VEB
IC
PD
PD
TJ, Tstg
Value
–25
–25
–4.0
–200
625
5.0
1.5
12
–55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
MPS4126
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
2
BASE
1
EMITTER
COLLECTOR
3
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –1.0 mA, IB = 0)
Collector–Base Breakdown Voltage
(IC = –10
mA,
IE = 0)
Emitter–Base Breakdown Voltage
(IC = 0, IE = –10
mA)
Collector Cutoff Current
(VCB = –20 V, IE = 0)
Emitter Cutoff Current
(VEB = –3.0 V, IC = 0)
V(BR)CEO
–25
V(BR)CBO
–25
V(BR)EBO
–4.0
ICBO
IEBO
–50
–50
nAdc
nAdc
Vdc
Vdc
Vdc
©
Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 2
Publication Order Number:
MPS4126/D

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