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2SA1797_1

Description
Power Transistor (−50V, −3A)
File Size85KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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2SA1797_1 Overview

Power Transistor (−50V, −3A)

2SA1797
Transistors
Power Transistor (−50V,
−3A)
2SA1797
Features
1) Low saturation voltage.
V
CE (sat)
=
−0.35V
(Max.) at I
C
/ I
B
=
−1A
/
−50mA.
2) Excellent DC current gain characteristics.
3) Complements the 2SC4672.
External dimensions
(Unit : mm)
MPT3
4.5
1.6
0.5
1.5
(1)
(2)
(3)
1.0
Packaging specifications
Type
2SA1797
MPT3
PQ
AG
T100
1000
(1)Base
(2)Collector
(3)Emitter
0.4
1.5
3.0
0.5
1.5
0.4
2.5
4.0
0.4
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
∗Denotes
h
FE
Absolute maximum ratings
(Ta=25°C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
+
Limits
−50
−50
−6
−3
−6
0.5
2
150
−55~+150
Unit
V
V
V
A (DC)
A (Pulse)
1
W
2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power 2SA1797
dissipation
Junction temperature
Storage temperature
+
°C
°C
∗1
Single pulse, Pw=10ms
∗2
When mounted on a 40 40 0.7mm ceramic board.
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−50
−50
−6
82
Typ.
−0.15
200
36
Max.
−0.1
−0.1
−0.35
270
Unit
V
V
V
µA
µA
V
MHz
pF
I
C
=−50µA
I
C
=−1mA
I
E
=−50µA
V
CB
=−50V
Conditions
V
EB
=−5V
I
C
/I
B
=−1A/−50mA
V
CE
/I
C
=−2V/−0.5A
V
CE
=−2V,
I
E
=0.5A,
f=100MHz
V
CB
=−10V,
I
E
=0A,
f=1MHz
Rev.B
1/2

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2SA1797_1 2SA1797
Description Power Transistor (−50V, −3A) Power Transistor (−50V, −3A)
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