2SB1260 / 2SB1181 / 2SB1241
Transistors
Power Transistor (−80V,
−1A)
2SB1260 / 2SB1181 / 2SB1241
Features
1) Hight breakdown voltage and high current.
BV
CEO
=
−80V,
I
C
=
−1A
2) Good h
FE
linearty.
3) Low V
CE(sat)
.
4) Complements the 2SD1898 / 2SD1863 /
2SD1733.
External dimensions
(Unit : mm)
2SB1260
4.5
+0.2
−0.1
1.6±0.1
2SB1181
1.5
±
0.3
0.5±0.1
6.5
±
0.2
5.1
+
0.2
−
0.1
C0.5
2.3
+
0.2
−
0.1
0.5
±
0.1
9.5
±
0.5
1.5
+0.2
−0.1
0.3
5.5
+
0.1
−
0.9
4.0
±0.3
2.5
+0.2
−0.1
1.5
0.75
(1)
(2)
(3)
0.4±0.1
1.5±0.1
0.4
+0.1
−0.05
0.65
±
0.1
0.9
1.0±0.2
0.55
±
0.1
2.3
±
0.2
2.3
±
0.2
1.0
±
0.2
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
(1) (2) (3)
Structure
Epitaxial planar type
PNP silicon transistor
ROHM : MPT3
EIAJ : SC-62
Abbreviated
symbol: BE
∗
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
2SB1241
6.8±0.2
2.5±0.2
0.65Max.
1.0
0.5±0.1
(1)
(2)
(3)
2.54 2.54
1.05
0.45±0.1
14.5±0.5
4.4±0.2
0.9
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
∗
Denotes h
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
2SB1260
Collector power
dissipation
2SB1241, 2SB1181
2SB1181
Junction temperature
Storage temperature
Tj
Tstg
P
C
FE
Limits
−80
−80
−5
−1
−2
0.5
2
1
10
150
−55
to 150
∗2
∗3
∗1
Unit
V
V
V
A (DC)
A (Pulse)
W
W (Tc=25
°C
)
°C
°C
∗
1
∗
∗
2SB1260 : Pw=20ms duty=1/2
2SB1241 : Single pulse, Pw=100ms
2 2SB1260 : When mounted on a 40
×
40
×
0.7 mm ceramic board.
3 2SB1241 :
Printed circuit board, 1.7mm thick, collector copper plating 100mm
2
or larger.
Rev.C
2.5
1/3
2SB1260 / 2SB1181 / 2SB1241
Transistors
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
2SB1260, 2SB1181
2SB1241
Transition frequency 2SB1181
Output capacitance
2SB1260
2SB1181, 2SB1241
f
T
Cob
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
Min.
−80
−80
−5
−
−
−
82
120
−
−
−
Typ.
−
−
−
−
−
−
−
−
100
20
25
Max.
−
−
−
−1
−1
−0.4
390
390
−
−
−
Unit
V
V
V
I
C
= −50µ
A
I
C
= −1mA
I
E
= −50µ
A
V
CB
= −60V
V
EB
= −4V
I
C
/I
B
= −500mA/ −50mA
V
CE
= −3V,
I
C
= −0.1A
V
CE
= −10V,
I
E
=50mA,
f=100MHz
V
CB
= −10V
I
E
=0A
f=1MHz
Conditions
µ
A
µ
A
V
−
−
MHz
pF
pF
Packaging specifications and h
FE
Package
Code
Type
Taping
TL
2500
−
−
−
TV2
2500
−
−
−
T100
h
FE
PQR
QR
PQR
Basic ordering
unit (pieces)
1000
2SB1260
2SB1241
2SB1181
h
FE
values are classified as follows :
Item
h
FE
P
82 to 180
Q
120 to 270
R
180 to 390
Electrical characteristic curves
−1000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(A)
Ta
=
25°C
V
CE
= −5V
−1.0
−0.8
−0.6
−0.4
−0.2
Ta=25°C
−4.5mA
−4mA
−3.5mA
−3mA
−2.5mA
−2mA
−1.5mA
−1mA
1000
500
DC CURRENT GAIN : h
FE
Ta=25°C
−100
200
100
50
V
CE
= −3V
−1V
−10
−1
−0.1
0
−0.2 −0.4
−0.6
−0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : V
BE
(V)
−0.5mA
I
B
=0mA
0
0
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
−1.6
−1.8
−2.0
20
10
−1 −2
−5 −10 −20
−50 −100 −200 −500 −1000 −2000
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.1
Grounded emitter propagation
characteristics
Fig.2
Grounded emitter output
characteristics
Fig.3
DC current gain vs.
collector current
Rev.C
2/3
2SB1260 / 2SB1181 / 2SB1241
Transistors
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
TRANSITION FREQUENCY : f
T
(MHz)
Ta=25°C
1000
500
200
100
50
20
10
5
2
1
1
2
5
10 20
−2
−1
−0.5
−0.2
−0.1
−0.05
−0.02
−0.01
−
1
−
2
−
5
−
10
−
20
−
50
−
100
−
200
−
500
−
1000
−
2000
COLLECTOR CURRENT : I
C
(mA)
Ta
=
25°C
V
CE
= −5V
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
1000
500
200
100
50
20
10
5
2
1
−0.1
-0.2
−0.5
-1
−2
−5 −10 −20
−50 −100
Ta
=
25
°C
f
=
1MHz
I
E
=
0A
I
C
/I
B
=20
10
50 100 200
500 1000
EMITTER CURRENT : I
E
(mA)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.4
Collector-emitter saturation
voltage vs. collector current
Fig.5
Gain bandwidth product
vs. emitter current
Fig.6
Collector output capacitance
vs. collector-base voltage
EMITTER INPUT CAPACITANCE : Cib
(pF)
1000
500
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Ta
=
25°C
f
=
1MHz
I
C
=
0A
−10
I
C Max
.(Pulse)
I
C Max
.
Ta=25°C
∗Single
nonrepetitive
pulse
10
5
2
1
500m
200m
100m
50m
20m
10m
5m
I
C Max
.(Pulse)
P
W
−1
DC
Ta=25°C
Single
nonrepetitive
pulse
∗
0
=
1
=
1
P
W
0
=
1
P
W
200
100
50
P
W
−0.1
s
m
0m
s
ms
=
1
00
s
0m
DC
−0.01
20
10
−0.1 −0.2
−0.5
−1
−2
−5
−10
∗
Printed circuit board:
−0.001
−0.1
−1
−10
−100
2m
2
1m
copper plating at least 1 cm .
0.1 0.2 0.5 1 2 5 10 20 50 100200 5001000
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
1.7 mm thick with collector
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig. 7
Emitter input capacitance
vs. emitter-base voltage
Fig.8 Safe operating area
(2SB1260)
Fig.9
Safe operating area
(2SB1241)
−5
COLLECTOR CURRENT : I
C
(A)
−2
−1
Ta=25°C
Single
nonrepetitive
pulse
∗
=
1
P
W
−0.5
−0.2
−0.1
−0.05
−0.02
−0.01
−0.1 −0.2 −0.5 −1
−2
−5 −10 −20
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.10 Safe operating area
(2SB1181)
00
ms
−50 −100
Rev.C
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
Power technology
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