PD - 95498A
SMPS MOSFET
Applications
l
Switch Mode Power Supply (SMPS)
l
Motor Drive
l
Bridge Converters
l
All Zero Voltage Switching
l
Lead-Free
Benefits
l
Low Gate Charge Qg results in Simple
Drive Requirement
l
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
l
Enhanced Body Diode dv/dt Capability
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 second
Mounting torqe, 6-32 or M3 screw
IRFR3412PbF
IRFU3412PbF
HEXFET
®
Power MOSFET
V
DSS
100V
R
DS(on)
max
0.025Ω
I
D
48A
D-Pak
IRFR3412
I-Pak
IRFU3412
Max.
48
34
190
140
0.95
± 20
6.4
-55 to + 175
300(1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
48
190
A
––– ––– 1.3
V
––– 68 100
ns
––– 160 240
nC
––– 4.5 6.8
A
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 29A, V
GS
= 0V
T
J
= 125°C, I
F
= 29A
di/dt = 100A/µs
D
S
www.irf.com
1
12/03/04
IRFR/U3412PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
V
(BR)DSS
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
100
–––
–––
3.5
–––
–––
–––
–––
Typ.
–––
0.10
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.025
Ω
V
GS
= 10V, I
D
= 29A
5.5
V
V
DS
= V
GS
, I
D
= 250µA
1.0
V
DS
= 95V, V
GS
= 0V
µA
250
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
25
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
59
21
17
19
68
44
37
3430
270
150
1040
170
270
Max. Units
Conditions
–––
S
V
DS
= 50V, I
D
= 29A
89
I
D
= 29A
32
nC
V
DS
= 50V
26
V
GS
= 10V,
–––
V
DD
= 50V
–––
I
D
= 29A
ns
–––
R
G
= 6.8Ω
–––
V
GS
= 10V
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 80V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 80V
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
160
29
14
Units
mJ
A
mJ
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Notes:
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.05
50
110
Units
°C/W
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
Pulse width
≤
300µs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
Starting T
J
= 25°C, L = 0.38mH, R
G
= 25Ω,
I
AS
= 29A, (See Figure 12a)
I
SD
≤
29A, di/dt
≤
420A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
*
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
2
www.irf.com
IRFR/U3412PbF
1000
TOP
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
100
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
BOTTOM
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
10
1
10
0.1
4.5V
4.5V
0.01
0.1
1
20µs PULSE WIDTH
T
J
= 25
°
C
10
100
20µs PULSE WIDTH
T
J
= 175
°
C
1
0.1
1
10
100
V
DS
Drain-to-Source Voltage (V)
,
V
DS
Drain-to-Source Voltage (V)
,
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
I
D
= 48A
2.5
R
DS(on)
, Drain-to-Source On Resistance
I
D
, Drain-to-Source Current (A)
100
°
T
J
= 175 C
2.0
10
(Normalized)
1.5
T = 25
°
C
J
1
1.0
0.5
V DS= 25V
20µs PULSE WIDTH
0.1
4.0
5.0
6.0
7.0
8.0
9.0
V
GS
= 10V
0.0
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
V
GS
Gate-to-Source Voltage (V)
,
T
J
, Junction Temperature
(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRFR/U3412PbF
100000
VGS = 0V,
f = 1 MHZ
C iss
= C gs + Cgd ,
SHORTED
Crss = C gd
Coss = Cds + Cgd
20
VGS , Gate-to-Source Voltage (V)
C ds
ID= 29A
VDS = 80V
VDS= 50V
VDS= 20V
16
C, Capacitance (pF)
10000
12
Ciss
8
1000
Coss
Crss
100
1
10
100
4
0
0
20
40
60
80
100
Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.0
T J = 175°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100µsec
10
10.0
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
10msec
1.0
T J = 25°C
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VSD, Source-toDrain Voltage (V)
0.1
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRFR/U3412PbF
50
V
DS
LIMITED BY PACKAGE
R
D
V
GS
40
R
G
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
D.U.T.
+
-
V
DD
I
D
, Drain Current (A)
30
20
Fig 10a.
Switching Time Test Circuit
10
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature
( °C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
10
(Z
thJC
)
1
D = 0.50
Thermal Response
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
0.01
0.00001
0.0001
0.001
t
1
/ t
2
+T
C
0.1
P
DM
t
1
t
2
J
= P
DM
x Z
thJC
0.01
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
京公网安备 11010802033920号
EEWORLD
