2SC5824
Transistor
Power transistor (60V, 3A)
2SC5824
Features
1) High speed switching. (Tf : Typ. : 30ns at I
C
= 3A)
2) Low saturation voltage, typically (Typ. : 200mV at I
C
= 2A,
I
B
= 200mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2071.
External dimensions
(Unit : mm)
MPT3
1.0
4.0
2.5
0.5
1.5
0.4
(1)
(2)
3.0
0.5
(3)
1.5
0.4
1.6
Applications
NPN Silicon epitaxial planar transistor
(1)Base(Gate)
(2)Collector(Drain)
(3)Emitter(Sourse)
0.4
Each lead has same dimensions
Abbreviated symbol : UP
Structure
Low frequency amplifier
High speed switching
Packaging specifications
Package
Type
Taping
T100
1000
Code
Basic ordering unit
(pieces)
2SC5824
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Power dissipation
P
C
Junction temperature
Range of storage temperature
∗
1 Pw=100ms
∗
2 Each terminal mounted on a recommended land.
∗
3 Mounted on a 40x40x0.7(mm) ceramic substrate
Limits
60
60
6
3
6
500
2.0
150
−55~+150
Unit
V
V
V
A
A
mW
W
°C
°C
∗
1
∗
2
∗
3
Tj
Tstg
1.5
4.5
Rev.A
1/3
2SC5824
Transistor
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector−base breakdown voltage
BV
CBO
60
60
6
−
−
−
120
−
−
−
−
−
−
−
−
−
−
200
−
200
20
50
150
30
−
−
−
1.0
1.0
500
390
−
−
−
−
−
V
V
V
µA
µA
mV
−
MHz
pF
ns
ns
ns
I
C
=
100µA
I
C
=
1mA
I
E
=
100µA
V
CB
=
40V
V
EB
=
4V
I
C
=
2A, I
B
=
200mA
∗1
Collector−emitter breakdown voltage BV
CEO
Emitter−base breakdown voltage
Collector cut-off current
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
fT
C
ob
T
on
T
stg
Tf
Emitter cut-off current
Collector−emitter staturation voltage
DC current gain
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
V
CE
=
2V, I
C
=
100mA
V
CE
=
10V, I
E
= −
100mA, f
=
10MHz
∗1
V
CB
=
10V, I
E
=
0mA, f
=
1MHz
I
C
=
3A,
I
B1
=
300mA
I
B2
= −
300mA
V
CC
25V
∗2
∗1
Non repetitive pulse
∗2
See switching charactaristics measurement circuits
h
FE
RANK
Q
120-270
R
180-390
Electrical characteristic curves
10
1000
1000
Ta=25°C
V
CC
=25V
I
C
/I
B
=10/1
V
CE
=2V
1ms
COLLECTOR CURRENT : I
C
(A)
100ms
1
Tstg
DC CURRENT GAIN : h
FE
SWITCHING TIME (ns)
100
Ta=
−40°C
DC
0.1
10ms
Ta=25°C
100
Ton
Ta=100°C
10
Ta=125°C
0.01
Tf
Single non repoetitive pulse
0.001
0.1
1
10
100
10
0.01
0.1
1
10
1
0.001
0.01
0.1
1
10
COLLECTOR EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 Safe operating area
1000
Fig.2 Switching Time
10
Fig.3 DC current gain vs. collector
current
10
Ta=25°C
Ta=25°C
I
C
/I
B
=10/1
COLLECTOR SATURATION
VOLTAGE : V
CE
(sat)(V)
V
CE
=5V
DC CURRENT GAIN : h
FE
Ta=125°C
100
V
CE
=3V
1
COLLECTOR SATURATION
VOLTAGE : V
CE
(sat)(V)
Ta=100°C
1
10
V
CE
=2V
0.1
Ta=25°C
Ta=
−40°C
0.1
I
C
/I
B
=20/1
I
C
/I
B
=10/1
1
0.001
0.01
0.1
1
10
0.01
0.001
0.01
0.1
1
10
0.01
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.4 DC current gain vs. collector
current
Fig.5 Collector-emitter saturation voltage
Fig.6 Collector-emitter saturation voltage
vs. collector current
vs. Collector Current
Rev.A
2/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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