2SK2715_1 datasheet, PDF - EEWORLD Datasheet

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2SK2715_1: Description10V Drive Nch MOS FET; File Size68KB，5 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/

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2SK2715_1 Overview

10V Drive Nch MOS FET

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2SK2715

Transistors

10V Drive Nch MOS FET

2SK2715

Structure

Silicon N-channel

MOSFET

External dimensions

(Unit : mm)

CPT3

6.5

5.1

2.3

0.5

Features

1) Low on-resistance.

2) Fast switching speed.

3) Wide SOA (safe operating area).

4) Gate-source voltage (V

GSS

) guaranteed to be

±30V.

5) Drive circuit can be simple.

6) Parallel use is easy.

5.5

1.5

0.9

0.75

0.65

(1)Gate

(2)Drain

(3)Source

0.9

(1)

2.3

(2)

(3)

2.3

0.8Min.

0.5

1.0

Abbreviated symbol : K2715

Application

Switching

Packaging specifications

Package

Code

Type

Basic ordering unit (pieces)

Taping

2500

Inner circuit

2SK2715

(1) Gate

(2) Drain

(3) Source

(1)

(2)

Absolute maximum ratings

(Ta=25°C)

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Reverse drain

current

Continuous

Pulsed

Continuous

Pulsed

Symbol

DSS

GSS

∗

DRP

∗

Tch

Tstg

Limits

500

±30

150

−55

+150

Unit

°C

Total power dissipation (Tc=25°C)

Channel temperature

Storage temperature

∗Pw≤10µs,

Duty cycle≤1%

Rev.B

2.5

1.5

(3)

9.5

1/4

Appendix

Notes

No technical content pages of this document may be reproduced in any form or transmitted by any

means without prior permission of ROHM CO.,LTD.

The contents described herein are subject to change without notice. The specifications for the

product described in this document are for reference only. Upon actual use, therefore, please request

that specifications to be separately delivered.

Application circuit diagrams and circuit constants contained herein are shown as examples of standard

use and operation. Please pay careful attention to the peripheral conditions when designing circuits

and deciding upon circuit constants in the set.

Any data, including, but not limited to application circuit diagrams information, described herein

are intended only as illustrations of such devices and not as the specifications for such devices. ROHM

CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any

third party's intellectual property rights or other proprietary rights, and further, assumes no liability of

whatsoever nature in the event of any such infringement, or arising from or connected with or related

to the use of such devices.

Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or

otherwise dispose of the same, no express or implied right or license to practice or commercially

exploit any intellectual property rights or other proprietary rights owned or controlled by

ROHM CO., LTD. is granted to any such buyer.

Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices

(such as audio visual equipment, office-automation equipment, communications devices, electrical

appliances and electronic toys).

Should you intend to use these products with equipment or devices which require an extremely high level of

reliability and the malfunction of with would directly endanger human life (such as medical instruments,

transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other

safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control

Order in Japan.

In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)

on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1

2SK2715_1 Related Products

	2SK2715_1	2SK2715
Description	10V Drive Nch MOS FET	10V Drive Nch MOS FET

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