2SK2715
Transistors
10V Drive Nch MOS FET
2SK2715
Structure
Silicon N-channel
MOSFET
External dimensions
(Unit : mm)
CPT3
6.5
5.1
2.3
0.5
Features
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (V
GSS
) guaranteed to be
±30V.
5) Drive circuit can be simple.
6) Parallel use is easy.
5.5
1.5
0.9
0.75
0.65
(1)Gate
(2)Drain
(3)Source
0.9
(1)
2.3
(2)
(3)
2.3
0.8Min.
0.5
1.0
Abbreviated symbol : K2715
Application
Switching
Packaging specifications
Package
Code
Type
Basic ordering unit (pieces)
Taping
TL
2500
Inner circuit
2SK2715
(1) Gate
(2) Drain
(3) Source
(1)
(2)
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Reverse drain
current
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
∗
I
DR
I
DRP
∗
P
D
Tch
Tstg
Limits
500
±30
2
6
2
6
20
150
−55
to
+150
Unit
V
V
A
A
A
A
W
°C
°C
Total power dissipation (Tc=25°C)
Channel temperature
Storage temperature
∗Pw≤10µs,
Duty cycle≤1%
Rev.B
2.5
1.5
(3)
9.5
1/4
2SK2715
Transistors
Electrical characteristics
(Ta=25°C)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse recovery time
Reverse recovery charge
∗
Pulsed
Symbol
I
GSS
V
(BR)DSS
I
DSS
V
GS(th)
R
DS(on)
∗
| Y
fs
|
∗
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
∗
∗
∗
∗
∗
∗
Min.
−
500
−
2.0
−
0.6
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
−
3.0
1.5
280
58
23
10
12
30
63
410
1.7
Max.
±100
−
100
4.0
4.0
−
−
−
−
−
−
−
−
−
−
Unit
nA
V
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
ns
µC
Test Conditions
V
GS
=±30V,
V
DS
=0V
I
D
=1mA,
V
GS
=0V
V
DS
=500V,
V
GS
=0V
V
DS
=10V,
I
D
=1mA
I
D
=1A,
V
GS
=10V
I
D
=1A,
V
DS
=10V
V
DS
=10V
V
GS
=0V
f=1MHz
I
D
=1A,
V
DD
150V
V
GS
=10V
R
L
=150Ω
R
G
=10Ω
I
DR
=2A,
V
GS
=0V
di/dt=100A/µs
Electrical characteristic curves
10
5
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
10
m
1.4
1.2
1.0
0.8
0.6
0.4
0.2
4.5V
4V
1
2
3
4
5
6
7
8
9
10
5V
DRAIN CURRENT : I
D
(A)
is
n)
th
S(o
in R
D
n y
2
tio b
ra ited
e
1
Op lim
is
0.5
0.2
0.1
0.05
ar
ea
2.0
1.8
1.6
s
0
µ
s
10
1m
s
n
m
tio
00
ra
=
1
pe
P
W
C O
D
s
50 100 200 500 1000
V
GS
=10V
6V
Ta=25°C
Pulsed
10
5
V
DS
=
10V
Pulsed
Ta=−25°C
25°C
75°C
125°C
2
1
0.5
0.2
0.1
0.05
0
1
2
3
4
5
6
7
8
0.02 Tc=25°C
Single pulse
0.01
1 2
5 10 20
0
0
DRAIN-SOURCE VOLTAGE : V
DS
(V)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.1 Maximum safe operating area
Fig.2 Typical output characteristics
Fig.3 Typical transfer characteristics
GATE THRESHOLD VOLTAGE : V
GS(th)
(V)
6.4
5.6
4.8
4.0
3.2
2.4
1.6
0.8
0
−50 −25
0
25
50
75
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(W)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
V
DS
=
10V
l
D
=1mA
50
V
GS
=
4V
Pulsed
8
7
6
5
4
3
1A
2
1
0
5
10
15
20
25
30
I
D
=2A
Ta=25°C
Pulsed
20
10
5
Ta=125°C
75°C
25°C
2
1
0.5
0.01 0.02 0.05 0.1 0.2
−25°C
100 125 150
0.5
1
2
5
CHANNEL TEMPERATURE : Tch
(°C)
DRAIN CURRENT : I
D
(A)
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.4 Gate threshold voltage
vs. channel temperature
Fig.5 Static drain-source on-state
resistance vs. drain current
Fig.6 Static drain-source on-state
resistance vs. gate-source voltage
Rev.B
2/4
2SK2715
Transistors
FORWARD TRANSFER ADMITTANCE : |Y
fS
|
(S)
V
GS
=
10V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
V
DS
=10V
Pulsed
−25°C
25°C
75°C
Ta=125°C
10
8
6
I
D
=2A
4
2
0
−50 −25
1A
2
1
0.5
0.2
0.1
0.05
REVERSE DRAIN CURRENT : I
DR
(A)
12
5
5
V
GS
=0V
Pulsed
Ta=125°C
75°C
25°C
−25°C
2
1
0.5
0.2
0.1
0.05
0
0
25
50
75
100 125 150
0.02
0.01 0.02 0.05 0.1 0.2
0.5
1
2
5
0.5
1.0
1.5
CHANNEL TEMPERATURE : Tch
(°C)
DRAIN CURRENT : I
D
(A)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
Fig.7 Static drain-source on-state
resistance vs. channel temperature
Fig.8 Forward transfer admittance
vs. drain current
Fig.9 Reverse drain current
vs. source-drain voltage (
Ι
)
REVERSE DRAIN CURRENT : I
DR
(A)
5
Ta=25°C
Pulsed
10V
V
GS
=0V
1000
500
CAPACITANCE : C
(pF)
200
100
50
20
10
5
2
1
SWITCHING TIME : t
(ns)
2
1
0.5
C
iss
Ta=25°C
V
GS
=0V
f=1MHz
Pulsed
1000
500
200
100
50
Ta=25°C
V
DD
=150V
V
GS
=10V
R
G
=10Ω
Pulsed
C
oss
C
rss
t
f
t
d(off)
0.2
0.1
0.05
0
20
t
r
10
t
d(on)
0.5
1.0
1.5
2
5
10 20
50 100 200
5001000
5
0.1
0.2
0.5
1
2
5
10
20
SOURCE-DRAIN VOLTAGE : V
SD
(V)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
DRAIN CURRENT : I
D
(A)
Fig.10 Reverse drain current
vs. source-drain voltage (
ΙΙ
)
Fig.11 Typical capacitance
vs. drain-source voltage
Fig.12 Switching characteristics
(See Figures 16 and 17 for
the measurement circuit and
resultant waveforms)
500
DRAIN-SOURCE VOLTAGE : V
DS
(V)
450
400
350
300
250
200
150
100
50
0
0
4
8
V
DD
=400V
250V
100V
V
DS
14
V
DD
=100V
250V
400V
V
GS
REVERSE RECOVERY TIME : trr
(ns)
GATE-SOURCE VOLTAGE : V
GS
(V)
20
Ta=25°C
I
D
=
5A
18
Pulsed
16
5000
Ta=25°C
di/dt=100A/µs
V
GS
=0V
2000
Pulsed
1000
500
12
10
8
6
4
2
200
100
50
0.1
12
16
20
24
28
0
32
0.2
0.5
1
2
5
10
TOTAL GATE CHARGE : Qg
(nC)
REVERSE DRAIN CURRENT : I
DR
(A)
Fig.13 Dynamic input characteristics
(See Figure 18 for measurement circuit)
Fig.14 Reverse recovery time
vs. reverse drain current
Rev.B
3/4
2SK2715
Transistors
10
NORMALIZED TRANSIENT : r
(t)
THERMAL RESISTANCE
1
D=1
0.5
0.2
0.1
0.1
0.05
0.02
Tc=25°C
θ
th(ch-c)
(t)=r(t) ·
θ
th(ch-c)
θ
th(ch-c)
=6.25°C/W
0.01
0.01
Single pulse
100µ
1m
10m
PW
T
0.001
10µ
D=PW
T
100m
1
10
PULSE WIDTH : PW
(s)
Fig.15 Normalized transient thermal
resistance vs. pulse width
Switching characteristics measurement circuit
Pulse width
50%
10%
10%
90%
50%
V
GS
I
D
D.U.T.
R
L
V
DS
V
GS
V
DS
R
G
10%
90%
90%
t
d(off)
t
f
t
off
V
DD
t
d(on)
t
on
t
r
Fig.16 Switching time measurement circuit
Fig.17 witching time waveforms
I
G
=2mA
R
G
V
GS
I
D
D.U.T.
R
L
V
DS
V
DD
Fig.18 Gate charge measurement circuit
Rev.B
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
京公网安备 11010802033920号
EEWORLD
