2SK3019
Transistor
2.5V Drive Nch MOS FET
2SK3019
Structure
Silicon N-channel
MOSFET
External dimensions
(Unit : mm)
EMT3
1.6
0.3
(3)
0.7
0.55
0.8
(2)
(1)
0.2
0.5 0.5
1.0
0.2
0.15
Features
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
4) Drive circuits can be simple.
5) Parallel use is easy.
Packaging specifications
Package
Type
Code
Basic ordering unit
(pieces)
2SK3019
Taping
TL
3000
(1)Source
(2)Gate
(3)Drain
Abbreviated symbol : KN
Equivalent circuit
Drain
Gate
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
DP
∗
1
P
D
∗
2
Tch
Tstg
Limits
30
±20
±100
±400
150
150
−55
to
+150
Unit
V
V
mA
mA
mW
°C
°C
∗
Gate
Protection
Diode
0.1Min.
Applications
Interfacing, switching (30V, 100mA)
1.6
Source
∗A
pr
otection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.
∗1
Pw≤10µs, Duty cycle≤50%
∗2
With each pin mounted on the recommended lands.
Thermal resistance
Parameter
Channel to ambient
∗
With each pin mounted on the recommended lands.
Symbol
Rth(ch-a)
∗
Limits
833
Unit
°C
/ W
Rev.B
1/3
2SK3019
Transistor
Electrical characteristics
(Ta=25°C)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
I
GSS
V
(BR)DSS
I
DSS
V
GS(th)
R
DS(on)
R
DS(on)
|Y
fs
|
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Min.
−
30
−
0.8
−
−
20
−
−
−
−
−
−
−
Typ.
−
−
−
−
5
7
−
13
9
4
15
35
80
80
Max.
±1
−
1.0
1.5
8
13
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
Ω
Ω
ms
pF
pF
pF
ns
ns
ns
ns
Conditions
V
GS
=±20V,
V
DS
=0V
I
D
=10µA,
V
GS
=0V
V
DS
=30V,
V
GS
=0V
V
DS
=3V,
I
D
=100µA
I
D
=10mA,
V
GS
=4V
I
D
=1mA,
V
GS
=2.5V
I
D
=10mA,
V
DS
=3V
V
DS
=5V
V
GS
=0V
f=1MHz
I
D
=10mA,
V
DD
V
GS
=5V
R
L
=500Ω
R
G
=10Ω
5V
Electrical characteristic curves
GATE THRESHOLD VOLTAGE : V
GS(th)
(V)
0.15
4V
3V
200m
Ta=25°C
Pulsed
DRAIN CURRENT : I
D
(A)
100m
50m
20m
10m
5m
2m
1m
0.5m
V
DS
=3V
Pulsed
2
V
DS
=3V
I
D
=0.1mA
Pulsed
DRAIN CURRENT : I
D
(A)
3.5V
1.5
0.1
2.5V
1
0.05
2V
V
GS
=
1.5V
Ta=125°C
75°C
25°C
−25°C
0.5
0.2m
4
5
0
0
1
2
3
0.1m
0
1
2
3
4
0
−50
−25
0
25
50
75
100
125 150
DRAIN-SOURCE VOLTAGE : V
DS
(V)
GATE-SOURCE VOLTAGE : V
GS
(V)
CHANNEL TEMPERATURE : Tch (°C)
Fig.1 Typical output characteristics
Fig.2 Typical transfer characteristics
Fig.3 Gate threshold voltage vs.
channel temperature
50
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
20
10
5
Ta=125°C
75°C
25°C
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
20
10
5
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
V
GS
=4V
Pulsed
50
Ta=125°C
75°C
25°C
−25°C
V
GS
=2.5V
Pulsed
15
Ta=25°C
Pulsed
10
2
1
0.5
0.001
0.002
2
1
5
I
D
=0.1A
I
D
=0.05A
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.5
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0
0
5
10
15
20
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.4 Static drain-source on-state
resistance vs. drain current (Ι)
Fig.5 Static drain-source on-state
resistance vs. drain current (ΙΙ)
Fig.6 Static drain-source
on-state resistance vs.
gate-source voltage
Rev.B
2/3
2SK3019
Transistor
9
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
REVERSE DRAIN CURRENT : I
DR
(A)
8
7
I
D
=100mA
V
GS
=4V
Pulsed
FORWARD TRANSFER
ADMITTANCE : |Yfs| (S)
0.5
V
DS
=3V
Pulsed
200m
0.2
0.1
0.05
0.02
0.01
100m
50m
V
GS
=0V
Pulsed
6
5
4
I
D
=50mA
Ta=−25°C
25°C
75°C
125°C
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
Ta=125°C
75°C
25°C
−25°C
3
2
1
0.005
0.002
0
−50
−25
0
25
50
75
100 125
150
0.001
0.0001
0.0002
0.0005 0.001 0.002
0.005 0.01 0.02
0.05
0.1 0.2
0.5
0
0.5
1
1.5
CHANNEL TEMPERATURE : Tch (°C)
DRAIN CURRENT : I
D
(A)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
Fig.7 Static drain-source on-state
resistance vs. channel
temperature
Fig.8 Forward transfer
admittance vs. drain current
Fig.9 Reverse drain current vs.
source-drain voltage (Ι)
REVERSE DRAIN CURRENT : I
DR
(A)
200m
100m
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
Ta=25°C
Pulsed
50
20
Ta
=25°C
f=1MH
Z
V
GS
=0V
1000
t
f
t
d(off)
500
SWITHING TIME : t (ns)
CAPACITANCE : C (pF)
C
iss
10
5
200
100
50
Ta
=25°C
V
DD
=5V
V
GS
=5V
R
G
=10Ω
Pulsed
V
GS
=4V
0V
C
oss
C
rss
20
10
5
2
1
0.5
0.1
t
r
t
d(on)
0
0.5
1
1.5
0.2
0.5
1
2
5
10
20
50
2
0.1
0.2
0.5
1
2
5
10
20
50
100
SOURCE-DRAIN VOLTAGE : V
SD
(V)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
DRAIN CURRENT : I
D
(mA)
Fig.10 Reverse drain current vs.
source-drain voltage (ΙΙ)
Fig.11 Typical capacitance vs.
drain-source voltage
Fig.12 Switching characteristics
(See Figures 13 and 14 for
the measurement circuit
and resultant waveforms)
Switching characteristics measurement circuit
Pulse width
50%
10%
10%
90%
50%
V
GS
I
D
D.U.T.
R
L
V
DS
V
GS
V
DS
R
G
10%
90%
90%
t
d (off)
t
f
t
off
V
DD
t
d (on)
t
on
t
r
Fig.13 Switching time measurement circuit
Fig.14 Switching time waveforms
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
Talking
京公网安备 11010802033920号
EEWORLD
