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BD136

Description
1.5 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-225AA
Categorysemiconductor    Discrete semiconductor   
File Size83KB,2 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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BD136 Overview

1.5 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-225AA

BD136 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum collector current1.5 A
Maximum Collector-Emitter Voltage45 V
Processing package descriptionPLASTIC, CASE 77-09, 3 PIN
stateDISCONTINUED
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingtin lead
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
transistor applicationsamplifier
Transistor component materialssilicon
Maximum ambient power consumption1.25 W
Transistor typeuniversal power supply
Minimum DC amplification factor25
UTC BD136/138/140
PNP SILICON TRANSISTOR
DESCRIPTION
PNP EPITAXIAL SILICON TRANSISTOR
The UTC BD136/BD138/BD140 are silicon epitaxial
planer PNP transistor ,designed for use as audio amplifiers
and drivers utilizing complementary or quasi complementary
circuits.
The complementary NPN types are the BD135/BD137/
BD139.
1
TO-126
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Base Voltage
BD136
BD138
BD140
Collector-Emitter Voltage
BD136
BD138
BD140
Emitter-Base Voltage
Collector Current
Collector Peak Current
Base Current
Total Dissipation
Storage Temperature
Operating Junction Temperature
V
CEO
V
EBO
Ic
Ic
M
I
B
(Tc≦25°C)
(Ta≦25°C)
Ptot
Tstg
Tj
-45
-60
-80
-5
-1.5
-3
-0.5
12.5
1.25
-65 ~ 150
150
V
V
V
A
A
W
W
°C
°C
V
CBO
-45
-60
-80
V
SYMBOL
RATING
UNIT
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance, Junction-case
Thermal Resistance, Junction-ambient
SYMBOL
θ
jc
θ
jA
MAX
10
100
UNIT
°C/W
°C/W
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R204-013,B

BD136 Related Products

BD136 BD138 BD140
Description 1.5 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-225AA 1.5 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126 1.5 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-225AA
Number of terminals 3 3 3
Transistor polarity PNP PNP PNP
Maximum collector current 1.5 A 1.5 A 1.5 A
Maximum Collector-Emitter Voltage 45 V 60 V 80 V
Processing package description PLASTIC, CASE 77-09, 3 PIN TO-126, 3 PIN PLASTIC, CASE 77-09, 3 PIN
state DISCONTINUED ACTIVE ACTIVE
packaging shape Rectangle RECTANGULAR RECTANGULAR
Package Size Flange mounting FLANGE MOUNT FLANGE MOUNT
Terminal form THROUGH-hole THROUGH-HOLE THROUGH-HOLE
terminal coating tin lead TIN LEAD TIN LEAD
Terminal location single SINGLE SINGLE
Packaging Materials Plastic/Epoxy PLASTIC/EPOXY PLASTIC/EPOXY
structure single SINGLE SINGLE
Number of components 1 1 1
transistor applications amplifier SWITCHING AMPLIFIER
Transistor component materials silicon SILICON SILICON
Maximum ambient power consumption 1.25 W 1.25 W 1.25 W
Transistor type universal power supply GENERAL PURPOSE POWER GENERAL PURPOSE POWER
Minimum DC amplification factor 25 25 25
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