EEWORLDEEWORLDEEWORLD

Part Number

Search

BD138

Description
1.5 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126
Categorysemiconductor    Discrete semiconductor   
File Size83KB,2 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric Compare View All

BD138 Online Shopping

Suppliers Part Number Price MOQ In stock  
BD138 - - View Buy Now

BD138 Overview

1.5 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126

BD138 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum collector current1.5 A
Maximum Collector-Emitter Voltage60 V
Processing package descriptionTO-126, 3 PIN
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingTIN LEAD
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Shell connectionCOLLECTOR
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum ambient power consumption1.25 W
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor25
Rated crossover frequency160 MHz
UTC BD136/138/140
PNP SILICON TRANSISTOR
DESCRIPTION
PNP EPITAXIAL SILICON TRANSISTOR
The UTC BD136/BD138/BD140 are silicon epitaxial
planer PNP transistor ,designed for use as audio amplifiers
and drivers utilizing complementary or quasi complementary
circuits.
The complementary NPN types are the BD135/BD137/
BD139.
1
TO-126
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Base Voltage
BD136
BD138
BD140
Collector-Emitter Voltage
BD136
BD138
BD140
Emitter-Base Voltage
Collector Current
Collector Peak Current
Base Current
Total Dissipation
Storage Temperature
Operating Junction Temperature
V
CEO
V
EBO
Ic
Ic
M
I
B
(Tc≦25°C)
(Ta≦25°C)
Ptot
Tstg
Tj
-45
-60
-80
-5
-1.5
-3
-0.5
12.5
1.25
-65 ~ 150
150
V
V
V
A
A
W
W
°C
°C
V
CBO
-45
-60
-80
V
SYMBOL
RATING
UNIT
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance, Junction-case
Thermal Resistance, Junction-ambient
SYMBOL
θ
jc
θ
jA
MAX
10
100
UNIT
°C/W
°C/W
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R204-013,B

BD138 Related Products

BD138 BD136 BD140
Description 1.5 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126 1.5 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-225AA 1.5 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-225AA
Number of terminals 3 3 3
Transistor polarity PNP PNP PNP
Maximum collector current 1.5 A 1.5 A 1.5 A
Maximum Collector-Emitter Voltage 60 V 45 V 80 V
Processing package description TO-126, 3 PIN PLASTIC, CASE 77-09, 3 PIN PLASTIC, CASE 77-09, 3 PIN
state ACTIVE DISCONTINUED ACTIVE
packaging shape RECTANGULAR Rectangle RECTANGULAR
Package Size FLANGE MOUNT Flange mounting FLANGE MOUNT
Terminal form THROUGH-HOLE THROUGH-hole THROUGH-HOLE
terminal coating TIN LEAD tin lead TIN LEAD
Terminal location SINGLE single SINGLE
Packaging Materials PLASTIC/EPOXY Plastic/Epoxy PLASTIC/EPOXY
structure SINGLE single SINGLE
Number of components 1 1 1
transistor applications SWITCHING amplifier AMPLIFIER
Transistor component materials SILICON silicon SILICON
Maximum ambient power consumption 1.25 W 1.25 W 1.25 W
Transistor type GENERAL PURPOSE POWER universal power supply GENERAL PURPOSE POWER
Minimum DC amplification factor 25 25 25

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2302  120  904  559  2044  47  3  19  12  42 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号