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PZT4033

Description
PNP SILICON TRANSISTOR
File Size137KB,4 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet View All

PZT4033 Overview

PNP SILICON TRANSISTOR

UTC PZT4033
PNP EPITAXIAL SILICON TRANSISTOR
PNP SILICON TRANSISTOR
DESCRIPTION
The UTC PZT4033 designed for high current general
purpose amplifier applications.
1
2
3
4
SOT-223
1:EMITTER 2,4:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Power dissipation
Collector current
Junction Temperature
Storage Temperature
Thermal Resistance
SYMBOL
V
CBO
V
CEO
V
EBO
P
D
Ic
T
j
T
STG
R
θJA
RATING
-80
-80
-5
2
-1
-65 ~ +150
-65 ~ +150
62.5
UNIT
V
V
V
W
A
°C
°C/W
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain(note)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
TEST CONDITIONS
Ic=-10µA,I
E
=0
Ic=-10mA,I
B
=0
I
E
=-10µA,Ic=0
V
CB
=-60V,I
E
=0
V
EB
=-5V,Ic=0
V
CE
=-5V,Ic=-0.1mA
V
CE
=-5V,Ic=-100mA
V
CE
=-5V,Ic=-500mA
V
CE
=-5V,Ic=-1A
Ic=-150mA,I
B
=-15mA
Ic=-500mA,I
B
=-50mA
MIN
-80
-80
-5
TYP
MAX
UNIT
V
V
V
nA
nA
-50
-10
75
100
70
25
300
Collector-emitter saturation voltage
V
CE
(sat)
-0.15
-0.5
V
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
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