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PZTA14

Description
TRANSISTOR,BJT,DARLINGTON,NPN,30V V(BR)CEO,1.2A I(C),SOT-223
CategoryDiscrete semiconductor    The transistor   
File Size46KB,2 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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PZTA14 Overview

TRANSISTOR,BJT,DARLINGTON,NPN,30V V(BR)CEO,1.2A I(C),SOT-223

PZTA14 Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
Reach Compliance Codecompli
Maximum collector current (IC)0.5 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)20000
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
surface mountYES
Nominal transition frequency (fT)125 MHz
UTC PZTA14
NPN EPITAXIAL SILICON TRANSISTOR
DARLINGTON TRANSISTOR
DESCRIPTION
The UTC PZTA14 is a Darlington transistor.
FEATURES
*Collector-Emitter Voltage: V
CES
= 30V
*Collector Power Dissipation: Pc (max) = 1000 mW
1
2
3
4
SOT-223
1:EMITTER
2,4:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Power Dissipation
Collector Current
Junction Temperature
Storage Temperature
(Ta=25°C)
SYMBOL
V
CBO
V
CES
V
EBO
Pc
Ic
T
j
T
STG
VALUE
30
30
10
1000
500
150
-55 ~ +150
UNIT
V
V
V
mW
mA
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta =25°C, unless otherwise specified)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter on Voltage
Current Gain Bandwidth Product
Pulse test: Pulse Width<300µs, Duty Cycle=2%
SYMBOL
BV
CES
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
TEST CONDITIONS
Ic=100µA,I
B
=0
V
CB
=30V,I
E
=0
V
EB
=10V,Ic=0
V
CE
=5V,Ic=100mA
Ic=100mA,I
B
=0.1mA
V
CE
=5V,Ic=100mA
V
CE
=5V,Ic=10mA,
f=100MHz
MIN
30
MAX
100
100
UNIT
V
nA
nA
V
V
MHz
20000
1.5
2.0
125
UTC
UNISONIC TECHNOLOGIES CO., LTD.
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