UTC PZTA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE PNP
TRANSISTOR
DESCRIPTION
The UTC PZTA92/93 are high voltage PNP
transistors, designed for telephone signal switching
and for high voltage amplifier.
1
2
3
FEATURES
* High Collector-Emitter voltage:
V
CEO
=-300V(UTC PZTA92)
V
CEO
=-200V(UTC PZTA93)
*Collector Power Dissipation:
Pc(max)=1000mW
4
SOT-223
1:EMITTER
2,4:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS
(Ta=25
°C
)
PARAMETER
Collector-Base Voltage
UTC PZTA92
UTC PZTA93
Collector-Emitter Voltage
UTC PZTA92
UTC PZTA93
Emitter-Base Voltage
Collector Power Dissipation
Collector Current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
VALUE
-300
-200
UNIT
V
V
V
CEO
V
EBO
Pc
Ic
T
j
T
STG
-300
-200
-5
1000
-500
150
-55 ~ +150
V
mW
mA
°C
°C
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R207-006,B
UTC PZTA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS
(Ta=25°C,unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
UTC PZTA92
UTC PZTA93
Collector-Emitter Breakdown Voltage
UTC PZTA92
UTC PZTA93
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
UTC PZTA92
UTC PZTA93
Emitter Cut-Off Current
DC Current Gain(note)
SYMBOL
BV
CBO
TEST CONDITIONS
Ic=-100µA,I
E
=0
MIN
-300
-200
TYP
MAX UNIT
V
BV
CEO
Ic=-1mA,I
B
=0
-300
-200
-5
-0.25
-0.25
-0.10
60
80
80
-0.5
-0.90
50
V
V
MHz
V
V
µA
µA
BV
EBO
I
CBO
I
E
=-100µA,Ic=0
V
CB
=-200V,I
E
=0
V
CB
=-160V,I
E
=0
V
EB
=-3V,Ic=0
V
CE
=-10V,Ic=-1mA
V
CE
=-10V,Ic=-10mA
V
CE
=-10V,Ic=-30mA
Ic=-20mA,I
B
=-2mA
Ic=-20mA,I
B
=-2mA
V
CE
=-20V,Ic=-10mA,
f=100MHz
V
CB
=-20V,IE=0
f=1MHz
I
EBO
h
FE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
V
CE
(sat)1
V
BE
(sat)1
fT
Collector Base Capacitance
Ccb
UTC PZTA92
UTC PZTA93
Note:Pulse test:PW<300µs,Duty Cycle<2%, V
CE(SAT)1
<200mV(Class SIN)
6
8
pF
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R207-006,B
UTC PZTA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 DC Current Gain
3
10
4
-10
Fig.2 Saturation Voltage
2
10
Fig.3 Capacitance
Ic=10*I
B
VCE(sat),VBE(sat) (mV)
V
CE
=-10V
DC current Gain,H
FE
2
10
V
CE
(sat)
V
BE
(sat)
C
IB
(pF),C
CB
(pF)
3
-10
C
IB
1
10
1
10
2
-10
C
CB
0
10
0
-10
1
-10
2
-10
3
-10
4
-10
1
-10
0
-10
1
-10
2
-10
3
-10
4
-10
-1
-10
0
-10
1
-10
2
-10
Collector current, Ic(mA)
Collector current, Ic(mA)
Collector-Base voltage(V)
Fig.4 Active-region safe
operating area
3
-10
s
0.1m
Fig.5 Current Gain
Bandwidth product
3
10
1 .0
D
Collector current, Ic(mA)
Current gain bandwidth
product(MHz)
C
al
m °C
er 25
Th c=
T
5W n
1. atio
it
lim
ms
2
-10
MPSA93
V
CE
=-20V
f=100MHz
2
10
1
-10
625mW Thermal
limitation Ta=25°C
bonding breakdown
limitation Tj=150°C
1
-10
0
-10
1
-10
MPSA92
2
-10
3
-10
1
10
0
-10
1
-10
2
-10
Collector-Emitter voltage ( v)
Collector current, Ic(mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO. LTD
3
QW-R207-006,B
京公网安备 11010802033920号
EEWORLD
