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PZTA93

Description
RF POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size73KB,3 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric Compare View All

PZTA93 Overview

RF POWER TRANSISTOR

PZTA93 Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
Reach Compliance Codecompli
Maximum collector current (IC)0.5 A
ConfigurationSingle
Minimum DC current gain (hFE)60
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)1 W
surface mountYES
Nominal transition frequency (fT)50 MHz
UTC PZTA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE PNP
TRANSISTOR
DESCRIPTION
The UTC PZTA92/93 are high voltage PNP
transistors, designed for telephone signal switching
and for high voltage amplifier.
1
2
3
FEATURES
* High Collector-Emitter voltage:
V
CEO
=-300V(UTC PZTA92)
V
CEO
=-200V(UTC PZTA93)
*Collector Power Dissipation:
Pc(max)=1000mW
4
SOT-223
1:EMITTER
2,4:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS
(Ta=25
°C
)
PARAMETER
Collector-Base Voltage
UTC PZTA92
UTC PZTA93
Collector-Emitter Voltage
UTC PZTA92
UTC PZTA93
Emitter-Base Voltage
Collector Power Dissipation
Collector Current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
VALUE
-300
-200
UNIT
V
V
V
CEO
V
EBO
Pc
Ic
T
j
T
STG
-300
-200
-5
1000
-500
150
-55 ~ +150
V
mW
mA
°C
°C
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R207-006,B

PZTA93 Related Products

PZTA93 PZTA92
Description RF POWER TRANSISTOR RF POWER TRANSISTOR
Maker UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
Reach Compliance Code compli compli
Maximum collector current (IC) 0.5 A 0.5 A
Configuration Single Single
Minimum DC current gain (hFE) 60 60
Maximum operating temperature 150 °C 150 °C
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 1 W 1 W
surface mount YES YES
Nominal transition frequency (fT) 50 MHz 50 MHz
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