ZXMS6003G
60V N-channel self protected enhancement mode
IntelliFET
TM
MOSFET with programmable current limit
Summary
Continuous drain source voltage
On-state resistance
Nominal load current (V
IN
= 5V)
Clamping energy
V
DS
= 60V
500m
1.4A
550mJ
Description
Self protected low side MOSFET. Monolithic over
temperature, over current, over voltage (active
clamp) and ESD protected logic level functionality.
Intended as a general purpose switch, with status
indication and programmable current limit.
S
D
Status
IN
Top view
Note:
Rprog must be connected between the
Status and IN pins
Rprog
Features
•
•
•
•
•
Current limit programmable via external
resistor
Status pin (analog status indication)
Short circuit protection with auto restart
Over voltage protection (active clamp)
Thermal shutdown with auto restart
•
•
•
•
•
Over-current protection
Input Protection (ESD)
Load dump protection (actively protects
load)
Logic Level Input
High continuous current rating
Ordering information
Device
ZXMS6003GTA
Part mark
ZXMS6003
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
1,000
Issue 2 - March 2007
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ZXMS6003G
Functional block diagram
Status /
current limit
D
Over voltage
protection
IN
Over current
protection
Logic
Over temperature
protection
Human body
ESD protection
S
Applications and information
•
•
•
•
•
•
Especially suited for loads with a high in-rush current such as lamps and motors.
All types of resistive, inductive and capacitive loads in switching applications.
C compatible power switch for 12V and 24V DC applications.
Automotive rated.
Replaces electromechanical relays and discrete circuits.
Linear mode capability - the current-limiting protection circuitry is designed to de-activate at
low V
DS
, in order not to compromise the load current during normal operation. The design
max. DC operating current is therefore determined by the thermal capability of the package/
board combination, rather than by the protection circuitry.
Note:
This does not compromise the product's ability to self-protect during short-circuit load
conditions.
The current limit is programmable via an external resistor R
prog
connected between Status and
IN pins.
Status pin voltage reflects the gate drive being applied internally to the power MOSFET.
With V
IN
= 5V and R
prog
= 24k :
Status voltage ~ 5V indicates normal operation.
Status voltage ~ (2-3)V indicates that the device is in current-limiting mode.
Status voltage < 1V indicates that the device is in thermal shutdown.
•
•
Issue 2 - March 2007
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2
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ZXMS6003G
Issue 2 - March 2007
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ZXMS6003G
Absolute maximum ratings
Parameter
Continuous drain-source voltage
Drain-source voltage for short circuit protection V
IN
=5V
(a)
Drain-source voltage for short circuit protection V
IN
=10V
(a)
Continuous input voltage
Peak input voltage
Operating temperature range
Storage temperature range
Power dissipation @ T
amb
=25°C
(a)
Continuous drain current @ V
IN
=10V; T
amb
=25°C
(b)
Continuous drain current @ V
IN
=5V; T
amb
=25°C
(b)
Continuous source current (body diode)
(b)
Pulsed source current (body diode)
(c)
Unclamped single pulse inductive energy
Load dump protection
Electrostatic discharge (human body model)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
V
DS
V
DS(SC)
V
DS(SC)
V
IN
V
IN
T
j
,
T
stg
P
D
I
D
I
D
I
S
I
S
E
AS
V
LoadDump
V
ESD
Limit
60
36
20
-0.2 ... +10
-0.2 ... +20
-40 to +150
-55 to +150
2.5
1.6
1.4
3
8
550
80
4000
E
40/150/56
Unit
V
V
V
V
V
°C
°C
W
A
A
A
A
mJ
V
V
Thermal resistance
Parameter
Junction to ambient
Junction to ambient
Symbol
R
JA
R
JA
Limit
50
28
Unit
°C/W
°C/W
NOTES:
(a) For I
D(LIM)
< 1.2A (see safe operating area curve).
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight
copper.
(c) For a device surface mounted on FR4 board and measured at t<=10s.
Issue 2 - March 2007
© Zetex Semiconductors plc 2007
4
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ZXMS6003G
Characteristics
Issue 2 - March 2007
© Zetex Semiconductors plc 2007
5
www.zetex.com
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