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JANSM2N2222AUB

Description
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-4
CategoryDiscrete semiconductor    The transistor   
File Size65KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANSM2N2222AUB Overview

Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-4

JANSM2N2222AUB Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid2142032821
package instructionCERAMIC PACKAGE-4
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JESD-30 codeR-CDSO-N3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
GuidelineMIL-19500/255
surface mountYES
Terminal formNO LEAD
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)300 ns
Maximum opening time (tons)35 ns
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
DEVICES
LEVELS
2N2221A
2N2221AL
2N2221AUA
2N2221AUB
2N2221AUBC
2N2222A
2N2222AL
2N2222AUA
2N2222AUB
2N2222AUBC
JANSM – 3K Rads (Si)
JANSD – 10K Rads (Si)
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
JANSF – 300K Rads (Si)
JANSG – 500K Rads (Si)
JANSH – 1MEG Rads (Si)
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T
A
= +25°C
2N2221A, L
2N2221AUA
2N2221AUB, UBC
2N2222A, L
2N2222AUA
2N2222AUB, UBC
P
T
0.5
0.65
0.50
-65 to +200
W
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
50
75
6.0
800
Unit
Vdc
Vdc
Vdc
mAdc
TO-18 (TO-206AA)
2N2221A, 2N2222A
Operating & Storage Junction Temperature Range
T
op
, T
stg
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal Resistance, Junction-to-Ambient
2N2221A, L
2N2221AUA
2N2221AUB, UBC
1.
2.
2N2222A, L
2N2222AUA
2N2222AUB, UBC
R
θJA
325
210
325
°C/W
Symbol
Max.
Unit
4 PIN
2N2221AUA, 2N2222AUA
Derate linearly 3.08 mW/°C above T
A
> +37.5°C
Derate linearly 4.76 mW/°C above T
A
> +63.5°C
3 PIN
2N2221AUB, 2N2222AUB
2N2221AUBC, 2N2222AUBC
(UBC = Ceramic Lid Version)
T4-LDS-0042 Rev. 2 (080857)
Page 1 of 3
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