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1.2KE8.5

Description
Trans Voltage Suppressor Diode, 1200W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon
CategoryDiscrete semiconductor    diode   
File Size225KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

1.2KE8.5 Overview

Trans Voltage Suppressor Diode, 1200W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon

1.2KE8.5 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionO-PALF-W2
Reach Compliance Codecompli
ECCN codeEAR99
Maximum breakdown voltage11.5 V
Minimum breakdown voltage9.44 V
Breakdown voltage nominal value10 V
Shell connectionISOLATED
Maximum clamping voltage15.9 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation1200 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage8.5 V
Maximum reverse current25 µA
surface mountNO
technologyAVALANCHE
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
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