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K2750

Description
3.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size268KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

K2750 Overview

3.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET

K2750 Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage600 V
Processing package descriptionLEAD FREE, 2-10R1B, SC-67, 3 PIN
stateEOL/LIFEBUY
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingNOT SPECIFIED
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Shell connectionisolation
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current3.5 A
Rated avalanche energy201 mJ
Maximum drain on-resistance2.2 ohm
Maximum leakage current pulse14 A
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