BCP53-16E6327 datasheet, PDF - EEWORLD Datasheet

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BCP53-16E6327: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon; CategoryDiscrete semiconductor The transistor; File Size808KB，7 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BCP53-16E6327 Overview

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon

BCP53-16E6327 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Maximum power dissipation(Abs)	1.5 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	125 MHz
Base Number Matches	1

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BCP51...-BCP53...

PNP Silicon AF Transistors

•

For AF driver and output stages

•

High collector current

•

Low collector-emitter saturation voltage

•

Complementary types: BCP54 ... BCP56 (NPN)

•

Pb-free (RoHS compliant) package

•

Qualified according AEC Q101

Type

BCP51

BCP51-16

BCP52-16

BCP53-10

BCP53-16

Marking

1=B

Pin Configuration

2=C

3=E

4=C

Package

SOT223

Marking is the same as type-name

2011-10-13

BCP53-16E6327 Related Products

	BCP53-16E6327	BCP53-16E6433	BCP52-16E6327	BCP53-10E6327	BCP51E6327	BCP51-16E6327
Description	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Maker	Infineon	Infineon	Infineon	Infineon	Infineon	Infineon
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	1 A	1 A	1 A	1 A	1 A	1 A
Collector-emitter maximum voltage	80 V	80 V	60 V	80 V	45 V	45 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	100	100	63	40	100
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
JESD-609 code	e3	e3	e3	e3	e3	e3
Humidity sensitivity level	1	1	1	1	1	1
Number of components	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	1.5 W	1.5 W	1.5 W	1.5 W	1.5 W	1.5 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal surface	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	40	40	40	40	40	40
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	125 MHz	125 MHz	125 MHz	125 MHz	125 MHz	125 MHz
Base Number Matches	1	1	1	1	-	-

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