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BCP52-16E6327

Description
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
CategoryThe transistor   
File Size808KB,7 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
Download Datasheet Parametric Compare View All

BCP52-16E6327 Overview

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon

BCP52-16E6327 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)1.5 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)125 MHz
Base Number Matches1
BCP51...-BCP53...
PNP Silicon AF Transistors
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Complementary types: BCP54 ... BCP56 (NPN)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
Type
BCP51
BCP51-16
BCP52-16
BCP53-10
BCP53-16
Marking
*
*
*
*
*
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=C
2=C
2=C
2=C
2=C
3=E
3=E
3=E
3=E
3=E
4=C
4=C
4=C
4=C
4=C
-
-
-
-
-
-
-
-
-
-
Package
SOT223
SOT223
SOT223
SOT223
SOT223
*
Marking is the same as type-name
1
2011-10-13

BCP52-16E6327 Related Products

BCP52-16E6327 BCP53-16E6327 BCP53-16E6433 BCP53-10E6327 BCP51E6327 BCP51-16E6327
Description Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Maker Infineon Infineon Infineon Infineon Infineon Infineon
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code compliant compliant compliant compliant compliant compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 1 A 1 A 1 A 1 A 1 A 1 A
Collector-emitter maximum voltage 60 V 80 V 80 V 80 V 45 V 45 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 100 100 63 40 100
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
JESD-609 code e3 e3 e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1 1 1
Number of components 1 1 1 1 1 1
Number of terminals 4 4 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260
Polarity/channel type PNP PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 1.5 W 1.5 W 1.5 W 1.5 W 1.5 W 1.5 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal surface MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 40 40 40 40 40
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 125 MHz 125 MHz 125 MHz 125 MHz 125 MHz 125 MHz
Base Number Matches 1 1 1 1 - -

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