DATA SHEET
µ
PD29F032203AL-X
32M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY
4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE)
MOS INTEGRATED CIRCUIT
Description
The
µ
PD29F032203AL-X is a flash memory organized of 33,554,432 bits and 71 sectors. Sectors of this memory
can be erased at a low voltage (2.7 to 3.3 V, 3.0 to 3.6 V) supplied from a single power source, or the contents of the
entire chip can be erased. Two modes of memory organization, BYTE mode (4,194,304 words
×
8 bits) and WORD
mode (2,097,152 words
×
16 bits), are selectable so that the memory can be programmed in byte or word units.
The
µ
PD29F032203AL-X can be read while its contents are being erased or programmed. The memory cell is
divided into two banks. While sectors in one bank are being erased or programmed, data can be read from the other
bank thanks to the simultaneous execution architecture. The banks are 8M bits and 24M bits.
This flash memory comes in two types. The T type has a boot sector located at the highest address (sector) and the
B type has a boot sector at the lowest address (sector).
Because the
µ
PD29F032203AL-X enables the boot sector to be erased, it is ideal for storing a boot program. In
addition, program code that controls the flash memory can be also stored, and the program code can be
programmed or erased without the need to load it into RAM. Eight small sectors for storing parameters are provided,
each of which can be erased in 8K bytes units.
Once a program or erase command sequence has been executed, an automatic program or automatic erase
function internally executes program or erase and verification automatically.
Because the
µ
PD29F032203AL-X can be electrically erased or programmed by writing an instruction, data can be
reprogrammed on-board after the flash memory has been installed in a system, making it suitable for a wide range of
applications.
This flash memory is packed in a 48-pin PLASTIC TSOP(I) and 63-pin TAPE FBGA.
Features
•
Two bank organization enabling simultaneous execution of program / erase and read
•
Bank organization: 2 banks (8M bits + 24M bits)
•
Memory organization : 4,194,304 words
×
8 bits (BYTE mode)
2,097,152 words
×
16 bits (WORD mode)
•
Sector organization : 71 sectors (8K bytes / 4K words
×
8 sectors, 64K bytes / 32K words
×
63 sectors)
•
2 types of sector organization
•
T type : Boot sector allocated to the highest address (sector)
•
B type : Boot sector allocated to the lowest address (sector)
•
3-state output
•
Automatic program
•
Program suspend / resume
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14907EJ7V0DS00 (7th edition)
Date Published September 2002 NS CP (K)
Printed in Japan
The mark
5
shows major revised points.
©
2001
µ
PD29F032203AL-X
•
Unlock bypass program
•
Automatic erase
•
Chip erase
•
Sector erase (sectors can be combined freely)
•
Erase suspend / resume
•
Program / Erase completion detection
•
Detection through data polling and toggle bits
•
Detection through RY (/BY) pin
•
Sector group protection
•
Any sector group can be protected
•
Any protected sector group can be temporary unprotected
•
Sectors can be used for boot application
•
Hardware reset and standby using /RESET pin
•
Automatic sleep mode
•
Boot block sector protect by /WP (ACC) pin
•
Conforms to common flash memory interface (CFI)
•
Extra One Time Protect Sector provided
µ
PD29F032203AL
Access time
ns (MAX.)
Operating supply
voltage
V
Power supply current
(Active mode)
mA (MAX.)
Read
-A85TX, -A85BX
-B85TX, -B85BX
85
3.0 to 3.6
2.7 to 3.3
16
Program / Erase
30
5
Standby current
µ
A (MAX.)
•
Operating ambient temperature: –25 to +85°C
•
Program / erase time
•
Program: 9.0
µ
s / byte (TYP.)
11.0
µ
s / word (TYP.)
•
Sector erase :
Program / erase cycle : 100,000 cycles
0.3 s (TYP.) (4K words sector), 0.5 s (TYP.) (32K words sector)
Program / erase cycle : 300,000 cycles
0.5 s (TYP.) (4K words sector), 0.7 s (TYP.) (32K words sector)
•
Program / erase cycle : 300,000 cycles (MIN.)
2
Data Sheet M14907EJ7V0DS
µ
PD29F032203AL-X
Ordering Information
Part number
Access time
ns (MAX.)
Operating
supply voltage
V
Boot sector
Package
µ
PD29F032203ALGZ-A85TX-MJH
85
3.0 to 3.6
Top address (sector)
(T type)
48-pin PLASTIC TSOP (I) (12
×
20)
(Normal bent)
µ
PD29F032203ALGZ-A85BX-MJH
Bottom address
(sector)
(B type)
63-pin TAPE FBGA (11
×
7)
µ
PD29F032203ALF9-A85TX-BS2
Top address (sector)
(T type)
µ
PD29F032203ALF9-A85BX-BS2
Bottom address
(sector)
(B type)
48-pin PLASTIC TSOP (I) (12
×
20)
(Normal bent)
µ
PD29F032203ALGZ-B85TX-MJH
2.7 to 3.3
Top address (sector)
(T type)
µ
PD29F032203ALGZ-B85BX-MJH
Bottom address
(sector)
(B type)
63-pin TAPE FBGA (11
×
7)
µ
PD29F032203ALF9-B85TX-BS2
Top address (sector)
(T type)
µ
PD29F032203ALF9-B85BX-BS2
Bottom address
(sector)
(B type)
Remark
For address organization of sectors, see section
Sector Organization / Sector Address Table.
Data Sheet M14907EJ7V0DS
3
µ
PD29F032203AL-X
Pin Configurations
/xxx indicates active low signal.
48-pin PLASTIC TSOP (I) (12
×
20) (Normal bent)
[
µ
PD29F032203ALGZ-A85TX-MJH ]
[
µ
PD29F032203ALGZ-A85BX-MJH ]
[
µ
PD29F032203ALGZ-B85TX-MJH ]
[
µ
PD29F032203ALGZ-B85BX-MJH ]
Marking Side
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
/WE
/RESET
NC
/WP (ACC)
RY (/BY)
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
/BYTE
GND
I/O15, A−1
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
V
CC
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
/OE
GND
/CE
A0
A0 to A20
: Address inputs
Data Inputs / Outputs
I/O0 to I/O14 :
I/O15, A−1 : Data 15 Input / output (WORD mode)
LSB address input (BYTE mode)
/CE
/WE
/OE
/BYTE
/RESET
RY (/BY)
V
CC
GND
NC
Note
: Chip Enable
: Write Enable
: Output Enable
: Mode select
: Hardware reset input
: Ready (Busy) output
: Supply Voltage
: Ground
: No Connection
/WP (ACC) : Write Protect (Accelerated) input
Note
Some signals can be applied because this pin is not connected to the inside of the chip.
Remark
Refer to
Package Drawings
for the 1-pin index mark.
4
Data Sheet M14907EJ7V0DS
µ
PD29F032203AL-X
63-pin TAPE FBGA (11
×
7)
[
µ
PD29F032203ALF9-A85TX-BS2]
[
µ
PD29F032203ALF9-A85BX-BS2]
[
µ
PD29F032203ALF9-B85TX-BS2]
[
µ
PD29F032203ALF9-B85BX-BS2]
Top View
Top View
Bottom View
Bottom View
8
7
6
5
4
3
2
1
A B C D E F G H J K L M
A B C D E F G H
A
B
C
A
D
B
E
C
NC
A14
A13
A10
A9
NC
A20
A18
RY(/BY)
A6
A18
A2
A5
A2
M L K J H G F E D C B A
Top View
F
G
Top View
D
NC
A15
A14
A11
A10
A19
A20
A5
A17
A1
A4
A1
E
A16
A16
SA
I/O7
I/O6
I/O5
I/O2
I/O0
I/O1
A0
V
SS
A0
H G F E D C B A
H
F
J
G
K
H
GND
I/O14
I/O6
I/O5
I/O4
CIOs
I/O3
I/O11
I/O1
I/O2
GND
I/O8
L
M
8
7
6
5
4
3
2
1
NC
NC
NC
8
NC
7
6
5
4
3
NC
NC
NC
NC
NC
NC
2
NC
1
A15
A12
A13
A11
A12
A8
A9
A8
A19
/RESET
/WE
CE2s
/WE
RY(/BY) /WP(ACC)
/WP(ACC) /RESET
A7
A17
/LB
/UB
A4
A3
A7
A6
A3
CIOf
V
SS
/BYTE I/O15,A−1
I/O15, A-1 I/O7
I/O14
I/O13
I/O12
I/O13
I/O12
V
CC
I/O4
V
CC
s
I/O10
I/O11
I/O3
V
CC
f
I/O9
I/O8
I/O9
I/O10
/OE
/CE
/OE
I/O0
/CEf
/CE1s
NC
NC
NC
NC
A0 to A20
I/O15, A−1
/CE
/WE
/OE
/BYTE
/RESET
RY (/BY)
/WP (ACC)
V
CC
GND
NC
Note
: Address inputs
: Data 15 Input / output (WORD mode)
LSB address input (BYTE mode)
: Chip Enable
: Write Enable
: Output Enable
: Mode select
: Hardware reset input
: Ready (Busy) output
: Write Protect (Accelerated) input
: Supply Voltage
: Ground
: No Connection
I/O0 to I/O14 : Data Inputs / Outputs
Note
Some signals can be applied because this pin is not connected to the inside of the chip.
Remark
Refer to
Package Drawings
for the index mark.
INPUT / OUTPUT PIN FUNCTION
Refer to
DUAL OPERATION FLASH MEMORY 32M BITS A SERIES Information (M14914E).
Data Sheet M14907EJ7V0DS
5
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