NSF2250WT1
NPN Silicon Oscillator and
Mixer Transistor
The NSF2250WT1 NPN silicon epitaxial bipolar transistor is
intended for use in general purpose UHF oscillator and mixer
applications. It is suitable for automotive keyless entry and TV tuner
designs.
The device features stable oscillation and small frequency drift
during changes in the supply voltage and over the ambient temperature
range.
Features
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COLLECTOR
3
1
BASE
•
•
•
•
High Gain Bandwidth Product: f
T
= 2000 MHz Minimum
Tightly Controlled h
FE
Range: h
FE
= 120 to 250
Low Feedback Capacitance: C
RE
= 0.45 pF Typical
Pb−Free Package is Available
2
EMITTER
MAXIMUM RATINGS
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Electrostatic Discharge
Symbol
V
CBO
V
CEO
VE
BO
I
C
ESD
Value
30
15
3.0
50
Units
V
V
V
mA
SOT−323/SC−70
CASE 419
STYLE 3
1
HBM − Class 1C
MM − Class A
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Lead
Junction and Storage Temperature
Range
Symbol
P
D
Max
202 (Note 1)
310 (Note 2)
1.6 (Note 1)
2.5 (Note 2)
618 (Note 1)
403 (Note 2)
280 (Note 1)
332 (Note 2)
−55 to +150
Unit
mW
mW/°C
°C/W
°C/W
°C
1
3M = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
3M M
G
G
MARKING DIAGRAM
R
qJA
R
qJL
T
J
, T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
ORDERING INFORMATION
Device
NSF2250WT1
NSF2250WT1G
Package
SOT−323
SOT−323
(Pb−Free)
Shipping
†
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2006
1
April, 2006 − Rev. 5
Publication Order Number:
NSF2250WT1/D
NSF2250WT1
250
I
C
, COLLECTOR CURRENT (mA)
350
300
h
FE
, DC CURRENT GAIN
200
V
CE
= 12 V
T
A
= 125°C
250
200
25°C
150
100
50
V
CE
= 5 V
0
0.1
1
10
h
FE
, DC CURRENT GAIN
100
0
0.1
1
10
I
C
, COLLECTOR CURRENT
100
−55°C
150
5V
100
3V
50
Figure 2. DC Current Gain versus Collector
Current
10,000
ft, GAIN BANDWIDTH PRODUCT (MHz)
Figure 3. DC Current Gain versus Collector
Current
C
RE
, FEEDBACK CAPACITANCE (pF)
10
f = 1 MHz
T
A
= 25°C
5V
V
CE
= 12 V
1000
1
100
0.1
1
10
I
C
, COLLECTOR CURRENT (mA)
100
0.1
1
10
V
CB
, COLLECTOR BASE VOLTAGE (VOLTS)
100
Figure 4. Gain Bandwidth Product versus
Collector Current
1.6
1.4
C
ob
, CAPACITANCE (pF)
1.2
1
0.8
0.6
0.4
0.2
0
0
f = 1 MHz
T
A
= 25°C
Figure 5. Device Capacitance versus Collector
Base Voltage
5
10
15
20
25
30
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
35
Figure 6. Output Capacitance
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3
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