TIP140, TIP141, TIP142,
(NPN); TIP145, TIP146,
TIP147, (PNP)
TIP141, TIP142, TIP146, and TIP147 are Preferred Devices
Darlington Complementary
Silicon Power Transistors
Designed for general−purpose amplifier and low frequency
switching applications.
Features
http://onsemi.com
•
High DC Current Gain −
Min h
FE
= 1000 @ I
C
= 5.0 A, V
CE
= 4 V
•
Collector−Emitter Sustaining Voltage − @ 30 mA
V
CEO(sus)
= 60 Vdc (Min) − TIP140, TIP145
= 80 Vdc (Min) − TIP141, TIP146
= 100 Vdc (Min) − TIP142, TIP147
•
Monolithic Construction with Built−In Base−Emitter Shunt Resistor
•
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current
− Continuous
− Peak (Note 1)
Base Current − Continuous
Total Power Dissipation
@ T
C
= 25_C
Operating and Storage
Junction Temperature Range
Symbol
V
CEO
V
CB
V
EB
I
C
10
15
I
B
P
D
T
J
, T
stg
0.5
125
−65 to +150
Adc
W
_C
TIP140
TIP145
60
60
TIP141
TIP146
80
80
5.0
TIP142
TIP147
100
100
Unit
Vdc
Vdc
Vdc
Adc
10 AMPERE
DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−100 VOLTS, 125 WATTS
SOT−93 (TO−218)
CASE 340D
STYLE 1
MARKING DIAGRAM
AYWWG
TIP14x
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Thermal Resistance,
Junction−to−Ambient
Symbol
R
qJC
R
qJA
Max
1.0
35.7
Unit
°C/W
°C/W
A
Y
WW
TIP14x
x
G
= Assembly Location
= Year
= Work Week
= Device Code
= 0, 1, 2, 5, 6, or 7
= Pb−Free Package
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. 5 ms,
v
10% Duty Cycle.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2005
Preferred
devices are recommended choices for future use
and best overall value.
1
September, 2005 − Rev. 5
Publication Order Number:
TIP140/D
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
DARLINGTON SCHEMATICS
NPN
TIP140
TIP141
TIP142
BASE
COLLECTOR
PNP
TIP145
TIP146
TIP147
BASE
COLLECTOR
≈
8.0 k
≈
40
≈
8.0 k
≈
40
EMITTER
EMITTER
ORDERING INFORMATION
Device
TIP140
TIP140G
TIP141
TIP141G
TIP142
TIP142G
TIP145
TIP145G
TIP146
TIP146G
TIP147
TIP147G
Package
SOT−93 (TO−218)
SOT−93 (TO−218)
(Pb−Free)
SOT−93 (TO−218)
SOT−93 (TO−218)
(Pb−Free)
SOT−93 (TO−218)
SOT−93 (TO−218)
(Pb−Free)
SOT−93 (TO−218)
SOT−93 (TO−218)
(Pb−Free)
SOT−93 (TO−218)
SOT−93 (TO−218)
(Pb−Free)
SOT−93 (TO−218)
SOT−93 (TO−218)
(Pb−Free)
Shipping
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
http://onsemi.com
2
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
t, TIME (
μ
s)
Î Î Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î
Î
ÎÎÎ Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ Î Î Î
Î Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ Î Î Î Î
Î Î Î Î Î
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ Î Î Î
Î Î Î Î Î
Î Î Î
Î Î
Î Î Î
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎ Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î
ÎÎÎ Î Î
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î
Î Î Î Î Î
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î Î
Î Î Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎ Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ Î Î
Î Î Î Î Î Î
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ Î Î Î Î
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î
Î Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Collector−Emitter Sustaining Voltage (Note 2)
(I
C
= 30 mA, I
B
= 0)
V
CEO(sus)
Vdc
TIP140, TIP145
TIP141, TIP146
TIP142, TIP147
60
80
100
−
−
−
−
−
−
Collector Cutoff Current
(V
CE
= 30 Vdc, I
B
= 0)
(V
CE
= 40 Vdc, I
B
= 0)
(V
CE
= 50 Vdc, I
B
= 0)
Collector Cutoff Current
(V
CB
= 60 V, I
E
= 0)
(V
CB
= 80 V, I
E
= 0)
(V
CB
= 100 V, I
E
= 0)
I
CEO
mA
TIP140, TIP145
TIP141, TIP146
TIP142, TIP147
−
−
−
−
−
−
2.0
2.0
2.0
I
CBO
mA
TIP140, TIP145
TIP141, TIP146
TIP142, TIP147
−
−
−
−
−
−
−
−
1.0
1.0
1.0
Emitter Cutoff Current (V
BE
= 5.0 V)
I
EBO
20
mA
ON CHARACTERISTICS
(Note 2)
DC Current Gain
(I
C
= 5.0 A, V
CE
= 4.0 V)
(I
C
= 10 A, V
CE
= 4.0 V)
h
FE
−
1000
500
−
−
−
−
−
−
−
−
−
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 5.0 A, I
B
= 10 mA)
(I
C
= 10 A, I
B
= 40 mA)
Base−Emitter Saturation Voltage
(I
C
= 10 A, I
B
= 40 mA)
Base−Emitter On Voltage
(I
C
= 10 A, V
CE
= 4.0 Vdc)
V
CE(sat)
Vdc
2.0
3.0
3.5
3.0
V
BE(sat)
V
BE(on)
Vdc
Vdc
SWITCHING CHARACTERISTICS
Resistive Load
(See Figure 1)
Delay Time
Rise Time
t
d
t
r
−
−
−
−
0.15
0.55
2.5
2.5
−
−
−
−
ms
ms
ms
ms
Storage Time
Fall Time
(V
CC
= 30 V, I
C
= 5.0 A,
I
B
= 20 mA, Duty Cycle
v
2.0%,
I
B1
= I
B2
, R
C
& R
B
Varied, T
J
= 25_C)
t
s
t
f
2. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
v
2.0%.
10
R
B
& R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
, MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE I
B
≈
100 mA
R
C
MSD6100 USED BELOW I
B
≈
100 mA
TUT
V
2
approx
+12 V
0
V
1
appox.
−8.0 V
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1.0%
51
R
B
D
1
+4.0 V
25
ms
for t
d
and t
r
, D1 is disconnected
and V
2
= 0
V
CC
−30 V
5.0
t
s
SCOPE
PNP
NPN
2.0
t
f
1.0
0.5
t
r
t
d
@ V
BE(off)
= 0
0.2
0.1
0.2
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25°C
10
20
≈
8.0 k
≈
40
0.5
For NPN test circuit reverse diode and voltage polarities.
1.0
3.0
5.0
I
C
, COLLECTOR CURRENT (AMP)
Figure 1. Switching Times Test Circuit
Figure 2. Switching Times
http://onsemi.com
3
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
TYPICAL CHARACTERISTICS
NPN
TIP140, TIP141, TIP142
20,000
5000
hFE , DC CURRENT GAIN
T
J
= 150°C
hFE , DC CURRENT GAIN
100°C
25°C
−55
°C
1000
10,000
7000
5000
3000
2000
V
CE
= 4.0 V
7.0
10
1000
0.5
0.7
1.0
2.0
3.0 4.0 5.0
I
C
, COLLECTOR CURRENT (AMPS)
7.0
10
−55
°C
T
J
= 150°C
100°C
25°C
PNP
TIP145, TIP146, TIP147
2000
500
300
0.5
V
CE
= 4.0 V
1.0
2.0
3.0 4.0 5.0
I
C
, COLLECTOR CURRENT (AMPS)
VCE(SAT), COLLECTOR−EMITTER SATURATION VOLTAGE (VOLTS)
5.0
VCE(SAT), COLLECTOR−EMITTER SATURATION VOLTAGE (VOLTS)
Figure 3. DC Current Gain versus Collector Current
5.0
3.0
2.0
3.0
2.0
I
C
= 10 A, I
B
= 4.0 mA
I
C
= 10 A, I
B
= 4.0 mA
I
C
= 5.0 A, I
B
= 10 mA
1.0
I
C
= 1.0 A, I
B
= 2.0 mA
0.7
0.5
−75
−50
−25
0
25
50
75
100
125
150
175
I
C
= 5.0 A, I
B
= 10 mA
1.0
0.7
0.5
−75
−50
−25
0
25
50
75
I
C
= 1.0 A, I
B
= 2.0 mA
100
125
150
175
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 4. Collector−Emitter Saturation Voltage
VBE, BASE−EMITTER VOLTAGE (VOLTS)
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
−75
−25
25
75
VBE, BASE−EMITTER VOLTAGE (VOLTS)
4.0
V
CE
= 4.0 V
4.0
3.6
3.2
2.8
2.4
I
C
= 10 A
2.0
1.6
1.2
0.8
−75
−25
25
75
125
5.0 A
1.0 A
175
V
CE
= 4.0 V
I
C
= 10 A
5.0 A
1.0 A
125
175
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. Base−Emitter Voltage
http://onsemi.com
4
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
ACTIVE−REGION SAFE OPERATING AREA
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
20
IC, COLLECTOR CURRENT (AMP) (mA)
10
7.0
5.0
3.0
2.0
1.0
dc
T
J
= 150°C
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITATION @ T
C
= 25°C
TIP140, 145
TIP141, 146
TIP142, 147
15
20
70
30
50
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMPS)
15
10
7.0
5.0
100 mJ
2.0
0.2
10
1.0
100
0.5 1.0 2.0
5.0
10 20
L, UNCLAMPED INDUCTIVE LOAD (mH)
50
100
Figure 6. Active−Region Safe Operating Area
Figure 7. Unclamped Inductive Load
V
CE
MONITOR
MPS−U52
R
BB1
INPUT
50
50
1.5 k
R
BB2
= 100
V
BB2
= 0
V
BB1
= 10 V
100 mH
TUT
V
CC
= 20 V
I
C
MONITOR
R
S
= 0.1
INPUT
VOLTAGE
COLLECTOR
CURRENT
1.42 A
V
CE(sat)
−20 V
COLLECTOR
VOLTAGE
V
(BR)CER
w
≈
7.0 ms (SEE NOTE 1)
5.0 V
0
100 ms
0
TEST CIRCUIT
NOTE 1: Input pulse width is increased until I
CM
= 1.42 A.
NOTE 2: For NPN test circuit reverse polarities.
VOLTAGE AND CURRENT WAVEFORMS
Figure 8. Inductive Load
http://onsemi.com
5
京公网安备 11010802033920号
EEWORLD
