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HN58C65

Description
8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM
File Size109KB,16 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
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HN58C65 Overview

8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM

HN58C65 Series
8192-word
×
8-bit Electrically Erasable and Programmable CMOS
ROM
ADE-203-374A (Z)
Rev. 1.0
Apr. 12, 1995
Description
The Hitachi HN58C65 is a electrically erasable and programmable ROM organized as 8192-word
×
8-bit. It
realizes high speed, low power consumption, and a high level of reliability, employing advanced MNOS
memory technology and CMOS process and circuitry technology. It also has a 32-byte page programming
function to make its erase and write operations faster.
Features
Single 5 V Supply
On chip latches: address, data,
CE, OE, WE
Automatic byte write: 10 ms max
Automatic page write (32 byte): 10 ms max
Fast access time: 250 ns max
Low power dissipation: 20 mW/MHz typ (Active)
2.0 mW typ (Standby)
Data
polling and Ready/Busy
Data protection circuity on power on/power off
Conforms to JEDEC byte-wide standard
Reliable CMOS with MNOS cell technology
10
5
erase/write cycles (in page mode)
10 year data retention
Ordering Information
Type No.
HN58C65P-25
HN58C65FP-25
Note:
Access Time
250 ns
250 ns
Package
600 mil 28 pin plastic DIP (DP-28)
28 pin plastic SOP
*1
(FP-28D/DA)
1. T is added to the end of the type no. for a SOP of 3.0 mm (max) thickness.

HN58C65 Related Products

HN58C65 HN58C65FP-25 HN58C65P-25
Description 8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM 8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM 8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM
Is it Rohs certified? - incompatible incompatible
Parts packaging code - SOIC DIP
package instruction - SOP, SOP28,.5 DIP, DIP28,.6
Contacts - 28 28
Reach Compliance Code - unknow unknow
ECCN code - EAR99 EAR99
Maximum access time - 250 ns 250 ns
Other features - 100000 ERASE/WRITE CYCLES; 10 YEARS DATA RETENTION; 32 BYTE PAGE WRITE; AUTOMATIC WRITE 100000 ERASE/WRITE CYCLES; 10 YEARS DATA RETENTION; 32 BYTE PAGE WRITE; AUTOMATIC WRITE
command user interface - NO NO
Data polling - YES YES
Data retention time - minimum - 10 10
JESD-30 code - R-PDSO-G28 R-PDIP-T28
JESD-609 code - e0 e0
length - 18.3 mm 35.6 mm
memory density - 65536 bi 65536 bi
Memory IC Type - EEPROM EEPROM
memory width - 8 8
Number of functions - 1 1
Number of terminals - 28 28
word count - 8192 words 8192 words
character code - 8000 8000
Operating mode - ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature - 70 °C 70 °C
organize - 8KX8 8KX8
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code - SOP DIP
Encapsulate equivalent code - SOP28,.5 DIP28,.6
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE IN-LINE
page size - 32 words 32 words
Parallel/Serial - PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED
power supply - 5 V 5 V
Programming voltage - 5 V 5 V
Certification status - Not Qualified Not Qualified
ready/busy - YES YES
Maximum seat height - 2.5 mm 5.7 mm
Maximum standby current - 0.001 A 0.001 A
Maximum slew rate - 0.025 mA 0.025 mA
Maximum supply voltage (Vsup) - 5.5 V 5.5 V
Minimum supply voltage (Vsup) - 4.5 V 4.5 V
Nominal supply voltage (Vsup) - 5 V 5 V
surface mount - YES NO
technology - CMOS CMOS
Temperature level - COMMERCIAL COMMERCIAL
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form - GULL WING THROUGH-HOLE
Terminal pitch - 1.27 mm 2.54 mm
Terminal location - DUAL DUAL
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED
switch bit - NO NO
width - 8.4 mm 15.24 mm
Base Number Matches - 1 1
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