HN58C65 Series
8192-word
×
8-bit Electrically Erasable and Programmable CMOS
ROM
ADE-203-374A (Z)
Rev. 1.0
Apr. 12, 1995
Description
The Hitachi HN58C65 is a electrically erasable and programmable ROM organized as 8192-word
×
8-bit. It
realizes high speed, low power consumption, and a high level of reliability, employing advanced MNOS
memory technology and CMOS process and circuitry technology. It also has a 32-byte page programming
function to make its erase and write operations faster.
Features
•
•
•
•
•
•
•
•
•
•
•
•
Single 5 V Supply
On chip latches: address, data,
CE, OE, WE
Automatic byte write: 10 ms max
Automatic page write (32 byte): 10 ms max
Fast access time: 250 ns max
Low power dissipation: 20 mW/MHz typ (Active)
2.0 mW typ (Standby)
Data
polling and Ready/Busy
Data protection circuity on power on/power off
Conforms to JEDEC byte-wide standard
Reliable CMOS with MNOS cell technology
10
5
erase/write cycles (in page mode)
10 year data retention
Ordering Information
Type No.
HN58C65P-25
HN58C65FP-25
Note:
Access Time
250 ns
250 ns
Package
600 mil 28 pin plastic DIP (DP-28)
28 pin plastic SOP
*1
(FP-28D/DA)
1. T is added to the end of the type no. for a SOP of 3.0 mm (max) thickness.
HN58C65 Series
Absolute Maximum Ratings
Parameter
Supply voltage
*1
Input voltage
*1
Operating temperature range
*3
Storage temperature range
Symbol
V
CC
Vin
Topr
Tstg
Value
–0.6 to +7.0
–0.5
*2
to +7.0
0 to +70
–55 to +125
Unit
V
V
°C
°C
Notes: 1. With respect to V
SS
2. –3.0 V for pulse width
≤
50 ns.
3. Including electrical characteristics and data retention.
Recommended DC Operating Conditions
Parameter
Supply voltage
Input voltage
Symbol
V
CC
V
IL
V
IH
Operating temperature
Topr
Min
4.5
–0.3
2.2
0
Typ
5.0
—
—
—
Max
5.5
0.8
V
CC
+ 1
70
Unit
V
V
V
°C
4
HN58C65 Series
DC Characteristics
(Ta = 0 to +70°C, V
CC
= 5 V
±
10%)
Parameter
Input leakage current
Output leakage current
V
CC
current (Standby)
V
CC
current (Active)
Symbol
I
LI
I
LO
I
CC1
I
CC2
Min
—
—
—
—
Typ
—
—
—
—
Max
2
2
1
8
Unit
µA
µA
mA
mA
Test Conditions
V
CC
= 5.5 V
Vin = 5.5 V
V
CC
= 5.5 V
Vout = 5.5/0.4 V
CE
= V
IH
,
CE
= V
CC
Iout = 0 mA
Duty = 100%
Cycle = 1
µs
at
V
CC
= 5.5 V
Iout = 0 mA
Duty = 100%
Cycle = 250 ns at
V
CC
= 5.5 V
—
—
25
mA
Input low voltage
Input high voltage
Output low voltage
Output high voltage
Note:
V
IL
V
IH
V
OL
V
OH
–0.3
*1
2.2
—
2.4
—
—
—
—
0.8
V
CC
+ 1
0.4
—
V
V
V
V
I
OL
= 2.1 mA
I
OH
= –400
µA
1. –1.0 V for pulse width
≤
50 ns
Capacitance
(Ta = 25°C, f = 1 MHz)
Parameter
Input capacitance
*1
Output capacitance
*1
Note:
Symbol
Cin
Cout
Min
—
—
Typ
—
—
Max
6
12
Unit
pF
pF
Test Conditions
Vin = 0 V
Vout = 0 V
1. This parameter is periodically sampled and not 100% tested.
AC Characteristics
(Ta = 0 to +70°C, V
CC
= 5 V
±
10%)
Test Conditions
•
•
•
•
Input pulse levels: 0.4 V to 2.4 V
Input rise and fall time:
≤
20 ns
Output load: 1TTL gate + 100 pF
Reference levels for measuring timing: 0.8 V and 2 V
5
MCU
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