AO4824
Asymmetric Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO4824 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC-
DC converters.
Standard Product AO4824 is Pb-free
(meets ROHS & Sony 259 specifications). AO4824L
is a Green Product ordering option. AO4824 and
AO4824L are electrically identical.
Features
Q1
V
DS
(V) = 30V
I
D
= 8.5A
R
DS(ON)
< 17mΩ
R
DS(ON)
< 27mΩ
Q2
V
DS
(V) = 30V
I
D
=9.8A
(V
GS
= 10V)
<13mΩ
(V
GS
= 10V)
<15mΩ
(V
GS
= 4.5V)
D1
D2
SOIC-8
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G1
S1
G2
S2
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
T
A
=25°C
A
Current
I
D
T
A
=70°C
Pulsed Drain Current
B
Max Q1
30
±20
8.5
6.8
30
2
1.28
-55 to 150
Typ
48
74
35
Max Q2
30
±12
9.8
7.8
40
2
1.28
-55 to 150
Max
62.5
110
40
Units
V
V
A
I
DM
T
A
=25°C
P
D
T
J
, T
STG
Symbol
R
θJA
R
θJL
Symbol
R
θJA
R
θJL
T
A
=70°C
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET Q1
A
t
≤
10s
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
W
°C
Units
°C/W
Parameter: Thermal Characteristics MOSFET Q2
t
≤
10s
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
Typ
48
74
35
Max
62.5
110
40
Units
°C/W
Steady-State
Steady-State
Alpha & Omega Semiconductor, Ltd.
AO4824
Q1 Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=6A
Forward Transconductance
V
DS
=5V, I
D
=8.5A
Diode Forward Voltage
I
S
=1A,V
GS
=0V
Maximum Body-Diode Continuous Current
Conditions
30
I
D
=250µA, V
GS
=0V
V
DS
=24V, V
GS
=0V
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=8.5A
T
J
=125°C
0.003
T
J
=55°C
1
30
13.8
20
21
23
0.76
17
25
27
1
3
1250
1.8
1
5
100
3
V
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
7.5
6.5
25
5
21
10
ns
ns
ns
ns
ns
nC
Min
Typ
Max
Units
R
DS(ON)
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
g
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V)
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
1040
180
110
0.7
19.2
9.36
0.85
23
11.2
V
GS
=10V, V
DS
=15V, I
D
=8.5A
2.6
4.2
5.2
4.4
17.3
3.3
16.7
6.7
V
GS
=10V, V
DS
=15V, R
L
=1.8Ω,
R
GEN
=3Ω
I
F
=8.5A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=8.5A, dI/dt=100A/µs
2
A: The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
µs
pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
Rev 4 : Aug 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4824
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
I
D
(A)
15
10
5
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
26
V
GS
=4.5V
Normalized On-Resistance
24
22
R
DS(ON)
(m
Ω
)
20
18
16
14
12
10
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
1.0E+01
1.0E+00
40
R
DS(ON)
(m
Ω
)
I
D
=8.5A
I
S
(A)
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
20
25°C
10
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
V
GS
=10V
1.6
V
GS
=10V
1.4
I
D
=8.5A
V
GS
=4.5V
1.2
4V
10V
4.5V
3.5V
12
I
D
(A)
125°C
8
V
GS
=3V
4
20
16
V
DS
=5V
13.4
22
0
1.5
2
2.5
25°C
16
26
0.76
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
30
125°C
Alpha & Omega Semiconductor, Ltd.
AO4824
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
0
0
4
8
12
16
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1500
V
DS
=15V
I
D
=8.5A
Capacitance (pF)
1250
C
iss
1000
750
500
250
0
0
C
rss
5
10
C
oss
13.4
22
15
0.76
20
16
26
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
100.0
R
DS(ON)
limited
1ms
10ms
0.1s
100µs
10µs
Power (W)
50
40
30
20
10
0
0.001
T
J(Max)
=150°C
T
A
=25°C
I
D
(Amps)
10.0
1.0
T
J(Max)
=150°C
T
A
=25°C
0.1
0.1
1
1s
10s
DC
10
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO4824
Q2 Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
= ±12V
V
DS
=V
GS
I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=9.8A
T
J
=125°C
30
0.6
40
1.1
10.5
13.4
12
37
0.73
Min
30
0.004
1
5
100
2
13
17
15
1
3
Typ
Max Units
V
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=9A
Forward Transconductance
V
DS
=5V, I
D
=9.8A
Diode Forward Voltage
I
S
=1A
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
3656 4250
256
168
0.86 1.05
30.5
4.5
8.5
5.5
36
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
Gate Drain Charge
t
D(on)
Turn-On DelayTime
t
r
Turn-On Rise Time
t
D(off)
Turn-Off DelayTime
t
f
Turn-Off Fall Time
t
rr
Body Diode Reverse Recovery time
Q
rr
Body Diode Reverse Recovery charge
V
GS
=4.5V, V
DS
=15V, I
D
=9.8A
8.2
5
75
8.5
26
15
V
GS
=10V, V
DS
=15V, R
L
=1.6Ω,
R
GEN
=3Ω
I
F
=9.8A, dI/dt=100A/µs
I
F
=9.8A, dI/dt=100A/µs
2
3.1
52.4
5.7
21.5
11
A: The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
Rev 4: Aug 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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