D45C8 datasheet, PDF - EEWORLD Datasheet

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D45C8: DescriptionPNP Power Amplifier; CategoryDiscrete semiconductor The transistor; File Size407KB，3 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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D45C8 Overview

PNP Power Amplifier

D45C8 Parametric

Parameter Name	Attribute value
Brand Name	Fairchild Semiconduc
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	TO-220
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Manufacturer packaging code	TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	4 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	40 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	32 MHz
Base Number Matches	1

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D45C8 PNP Power Amplifier

April 2005

D45C8

PNP Power Amplifier

• Sourced from process 5P.

TO-220

1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings

Symbol

CEO

, T

STG

Collector-Emitter Voltage

Collector Current

= 25°C unless otherwise noted

Parameter

- Continuous

Value

-60

-4.0

-55 to +150

Units

°C

Operating and Storage Junction Temperature Range

Electrical Characteristics

=25°C unless otherwise noted

Symbol

Off Characteristics

(BR)CEO

CES

EBO

CE (sat)

BE (sat)

Collector-Emitter Breakdown Voltage

Collector-Cutoff Current

Emitter-Cutoff Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

= -100mA, I

= 0

= -70V, I

= 0

= -5.0V, I

= 0

= -1V, I

= -0.2A

= -1V, I

= -2.0A

= -1.0A,I

= -50mA

= -1.0A,I

= -100mA

= -20mA, V

= -4.0V

-60

-10

-100

120

-0.5

-1.3

µA

Parameter

Test Condition

Min.

Max.

Units

On Characteristics *

Small Signal Characteristics

Thermal Characteristics

=25°C unless otherwise noted

Symbol

θJC

θJA

Parameter

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Max.

480

2.1

62.5

Units

mW/°C

°C/W

www.fairchildsemi.com

D45C8 Rev. A

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