FDS8813NZ N-Channel PowerTrench
®
MOSFET
March 2007
FDS8813NZ
N-Channel
PowerTrench
®
MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
®
process that has
been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
tm
30V, 18.5A, 4.5mΩ
Features
Max r
DS(on)
=
4.5mΩ at V
GS
= 10V, I
D
= 18.5A
Max r
DS(on)
=
6.0mΩ at V
GS
= 4.5V, I
D
=16A
HBM ESD protection level of 5.6kV typical (note 3)
High performance trench technology for extremely low r
DS(on)
High power and current handling capability
RoHS compliant
D
D
D
D
G
S
S
Pin 1
S
D
S
D
D
S
S
D
G
SO-8
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
I
D
E
AS
P
D
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
(Note 4)
(Note 1a)
(Note 1b)
(Note 1a)
Parameter
Ratings
30
±20
18.5
74
337
2.5
1.0
-55 to +150
Units
V
V
A
mJ
W
°C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 1a)
(Note 1b)
25
50
125
°C/W
Package Marking and Ordering Information
Device Marking
FDS8813NZ
Device
FDS8813NZ
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
©2007 Fairchild Semiconductor Corporation
FDS8813NZ Rev.C
1
www.fairchildsemi.com
FDS8813NZ N-Channel PowerTrench
®
MOSFET
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
ΔBV
DSS
ΔT
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250μA, V
GS
= 0V
I
D
= 250μA, referenced to 25°C
V
DS
= 24V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
30
20
1
±10
V
mV/°C
μA
μA
On Characteristics
(Note 2)
V
GS(th)
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 250μA
I
D
= 250μA, referenced to 25°C
V
GS
= 10V, I
D
= 18.5A
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 4.5V, I
D
= 16A
V
GS
= 10V, I
D
= 18.5A,
T
J
= 125°C
V
DS
= 5V, I
D
= 18.5A
1
1.8
–6
3.8
4.7
5.1
74
4.5
6.0
6.6
S
mΩ
3
V
mV/°C
g
FS
Forward Transconductance
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
f = 1MHz
3115
580
345
1.8
4145
775
520
pF
pF
pF
Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
DD
= 15V
I
D
= 18.5A
V
DD
= 15V, I
D
= 18.5A
V
GS
= 10V, R
GEN
= 6Ω
13
8
39
7
55
28
9
10
24
16
63
14
76
40
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
S
= 2.1A
(Note 2)
0.7
32
27
1.2
47
41
V
ns
nC
I
F
= 18.5A, di/dt = 100A/μs
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain
pins. R
θJC
is guaranteed by design while R
θJA
is determined by the user’s board design.
a)
50°C/W when mounted on a
1in
2
pad of 2 oz copper.
b)
125°C/W when mounted on a
minimum pad .
2. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2%.
3. The diode connected between the gate and source serves only as protection against ESD . No gate overvoltage rating is implied.
4. Starting T
J
= 25°C, L = 3mH, I
AS
=15A, V
DD
= 30V, V
GS
= 10V.
FDS8813NZ Rev.C
2
www.fairchildsemi.com
FDS8813NZ N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25°C unless otherwise noted
75
V
GS
= 10.0V
4.0
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
60
V
GS
= 4.5V
3.5
3.0
2.5
2.0
V
GS
= 3.0V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
= 3.5V
45
30
V
GS
= 4.0V
V
GS
= 3.5V
V
GS
= 3.0V
V
GS
= 4V
V
GS
= 4.5V
1.5
1.0
V
GS
= 10.0V
15
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.5
0
15
30
45
60
75
ID, DRAIN CURRENT(A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
10
r
DS(on)
, DRAIN TO
SOURCE ON-RESISTANCE
(
m
Ω
)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-50
I
D
=18.5A
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
I
D
=9.5A
9
8
7
6
5
4
3
2
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 125
o
C
T
J
= 25
o
C
-25
0
25
50
75
100 125
T
J
, JUNCTION TEMPERATURE
(
o
C
)
150
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. Normalized On- Resistance
vs Junction Temperature
75
I
S
, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
Figure 4. On-Resistance vs Gate to
Source Voltage
100
V
GS
= 0V
I
D
, DRAIN CURRENT (A)
60
45
T
J
10
1
0.1
T
J
= -55
o
C
T
J
= 25
o
C
= 150
o
C
T
J
= 25
o
C
T
J
= 150
o
C
30
15
0
1.5
T
J
= -55
o
C
0.01
2.0
2.5
3.0
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
4.0
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDS8813NZ Rev.C
3
www.fairchildsemi.com
FDS8813NZ N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25°C unless otherwise noted
V
GS
, GATE TO SOURCE VOLTAGE(V)
10
ID = 18.5A
10000
Ciss
8
6
4
2
0
0
10
20
30
40
Q
g
, GATE CHARGE(nC)
50
60
V
DD
= 10V
V
DD
= 15V
CAPACITANCE (pF)
Coss
1000
V
DD
=20V
C
rss
f = 1MHz
V
GS
= 0V
100
0.1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
50
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
10
I
g
, GATE LEAKAGE CURRENT(A)
-3
30
I
AS
, AVALANCHE CURRENT(A)
10
10
10
10
10
10
-4
V
GS
= 0V
T
J
= 150
o
C
10
-5
T
J
= 25
o
C
-6
T
J
= 125
o
C
-7
T
J
= 25
o
C
-8
1
0.01
-9
0.1
1
10
100
t
AV
, TIME IN AVALANCHE(ms)
1000
0
5
10
15
20
25
30
V
GS
, GATE TO SOURCE VOLTAGE(V)
Figure 9. Unclamped Inductive
Switching Capability
20
Figure 10. Gate Leakage Current vs Gate to
Source Voltage
100
R
DS(ON)
LIMITED
1ms
I
D
, DRAIN CURRENT (A)
V
GS
= 10V
ID, DRAIN CURRENT (A)
15
10
10ms
100ms
SINGLE PULSE
TJ = MAX RATED
R
θ
JA = 125o
C/W
TA = 25o
C
10
R
θ
JA
= 50 C/W
o
1
V
GS
= 4.5V
1s
10s
DC
5
0.1
0
25
50
75
100
125
o
150
0.01
0.01
0.1
1
10
100
T
A
, AMBIENT TEMPERATURE
(
C
)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Maximum Continuous Drain
Current vs Ambient Temperature
Figure 12. Forward Bias Safe
Operating Area
FDS8813NZ Rev.C
4
www.fairchildsemi.com
FDS8813NZ N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25°C unless otherwise noted
P
(
PK
)
,
PEAK TRANSIENT POWER (W)
3000
1000
V
GS
= 10V
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
150
–
T
A
-----------------------
-
125
T
A
= 25
o
C
100
10
1
SINGLE PULSE
R
θ
JA = 125 C/W
o
0.1
-3
10
10
-2
10
-1
10
0
10
1
10
2
10
3
t
,
PULSE WIDTH (s)
Figure 13. Single Pulse Maximum Power Dissipation
1
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, Z
θ
JA
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
0.001
SINGLE PULSE
R
θ
JA = 125 C/W
o
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJA
x R
θJA
+ T
A
0.0001
-3
10
10
-2
10
-1
10
0
10
1
10
2
10
3
t, RECTANGULAR PULSE DURATION (s)
Figure 14.
Transient Thermal Response Curve
FDS8813NZ Rev.C
5
www.fairchildsemi.com
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