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SFU9210

Description
Advanced Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size254KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

SFU9210 Overview

Advanced Power MOSFET

SFU9210 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeTO-251
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)119 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (Abs) (ID)1.6 A
Maximum drain current (ID)1.6 A
Maximum drain-source on-resistance3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-251
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)19 W
Maximum pulsed drain current (IDM)6.4 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10
µA
(Max.) @ V
DS
= -200V
Lower R
DS(ON)
: 2.084
(Typ.)
1
SFR/U9210
BV
DSS
= -200 V
R
DS(on)
= 3.0
I
D
= -1.6 A
D-PAK
2
1
3
I-PAK
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 C)
Continuous Drain Current (T
C
=100 C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25 C) *
Total Power Dissipation (T
C
=25 C)
Linear Derating Factor
T
J
, T
STG
T
L
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes,
1/8”
from case for 5-seconds
o
o
2
O
1
O
1
O
3
O
o
o
Value
-200
-1.6
-1.08
1
O
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/ C
o
-6.4
+
30
_
119
-1.6
1.9
-5.0
2.5
19
0.15
- 55 to +150
o
C
300
Thermal Resistance
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
Characteristic
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
Typ.
--
--
--
Max.
6.58
50
110
o
Units
C/W
*
When mounted on the minimum pad size recommended (PCB Mount).
Rev. B
©1999 Fairchild Semiconductor Corporation

SFU9210 Related Products

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Description Advanced Power MOSFET Advanced Power MOSFET Advanced Power MOSFET
Is it Rohs certified? incompatible incompatible -
Maker Fairchild Fairchild -
Parts packaging code TO-251 TO-252 -
package instruction IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 -
Contacts 3 3 -
Reach Compliance Code unknow unknow -
ECCN code EAR99 EAR99 -
Avalanche Energy Efficiency Rating (Eas) 119 mJ 119 mJ -
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
Minimum drain-source breakdown voltage 200 V 200 V -
Maximum drain current (Abs) (ID) 1.6 A 1.6 A -
Maximum drain current (ID) 1.6 A 1.6 A -
Maximum drain-source on-resistance 3 Ω 3 Ω -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
JEDEC-95 code TO-251 TO-252 -
JESD-30 code R-PSIP-T3 R-PSSO-G2 -
JESD-609 code e0 e0 -
Number of components 1 1 -
Number of terminals 3 2 -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE -
Maximum operating temperature 150 °C 150 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form IN-LINE SMALL OUTLINE -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type P-CHANNEL P-CHANNEL -
Maximum power dissipation(Abs) 19 W 19 W -
Maximum pulsed drain current (IDM) 6.4 A 6.4 A -
Certification status Not Qualified Not Qualified -
surface mount NO YES -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
Terminal form THROUGH-HOLE GULL WING -
Terminal location SINGLE SINGLE -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
transistor applications SWITCHING SWITCHING -
Transistor component materials SILICON SILICON -
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