EEWORLDEEWORLDEEWORLD

Part Number

Search

SFR9210

Description
Advanced Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size254KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

SFR9210 Overview

Advanced Power MOSFET

SFR9210 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeTO-252
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)119 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (Abs) (ID)1.6 A
Maximum drain current (ID)1.6 A
Maximum drain-source on-resistance3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)19 W
Maximum pulsed drain current (IDM)6.4 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10
µA
(Max.) @ V
DS
= -200V
Lower R
DS(ON)
: 2.084
(Typ.)
1
SFR/U9210
BV
DSS
= -200 V
R
DS(on)
= 3.0
I
D
= -1.6 A
D-PAK
2
1
3
I-PAK
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 C)
Continuous Drain Current (T
C
=100 C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25 C) *
Total Power Dissipation (T
C
=25 C)
Linear Derating Factor
T
J
, T
STG
T
L
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes,
1/8”
from case for 5-seconds
o
o
2
O
1
O
1
O
3
O
o
o
Value
-200
-1.6
-1.08
1
O
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/ C
o
-6.4
+
30
_
119
-1.6
1.9
-5.0
2.5
19
0.15
- 55 to +150
o
C
300
Thermal Resistance
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
Characteristic
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
Typ.
--
--
--
Max.
6.58
50
110
o
Units
C/W
*
When mounted on the minimum pad size recommended (PCB Mount).
Rev. B
©1999 Fairchild Semiconductor Corporation

SFR9210 Related Products

SFR9210 SFU9210 SFR9210F
Description Advanced Power MOSFET Advanced Power MOSFET Advanced Power MOSFET
Is it Rohs certified? incompatible incompatible -
Maker Fairchild Fairchild -
Parts packaging code TO-252 TO-251 -
package instruction SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 -
Contacts 3 3 -
Reach Compliance Code unknow unknow -
ECCN code EAR99 EAR99 -
Avalanche Energy Efficiency Rating (Eas) 119 mJ 119 mJ -
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
Minimum drain-source breakdown voltage 200 V 200 V -
Maximum drain current (Abs) (ID) 1.6 A 1.6 A -
Maximum drain current (ID) 1.6 A 1.6 A -
Maximum drain-source on-resistance 3 Ω 3 Ω -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
JEDEC-95 code TO-252 TO-251 -
JESD-30 code R-PSSO-G2 R-PSIP-T3 -
JESD-609 code e0 e0 -
Number of components 1 1 -
Number of terminals 2 3 -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE -
Maximum operating temperature 150 °C 150 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE IN-LINE -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type P-CHANNEL P-CHANNEL -
Maximum power dissipation(Abs) 19 W 19 W -
Maximum pulsed drain current (IDM) 6.4 A 6.4 A -
Certification status Not Qualified Not Qualified -
surface mount YES NO -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
Terminal form GULL WING THROUGH-HOLE -
Terminal location SINGLE SINGLE -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
transistor applications SWITCHING SWITCHING -
Transistor component materials SILICON SILICON -
Power Amplifier Circuit Overview
The main task of various amplifier circuits is to obtain as large a voltage signal as possible on the load. Their main indicator is the voltage amplification factor. The main task of the power amplifi...
fish001 Analogue and Mixed Signal
Research on DSP Algorithm for Noise Elimination
[size=3]In the process of speech transmission, speech enhancement schemes are often used. It uses FEC coding technology (composed of convolution coding and Viterbi decoding algorithms) for data transm...
fish001 DSP and ARM Processors
About the SDRAM problem of stm32F429idiscovery development board
I am using the official STM32F429iDiscovery development board. When debugging the LCD, the following problems occur: Configure the LCD memory address to 0xD0000000, and open a data buffer in SDRAM at ...
ilovefengshulin stm32/stm8
First picture of the start-up - high voltage motor drive
Work has started, it's a new year again. The customer has updated the plan, and the high-voltage motor drive continues. The attachment is the IC reference material, which is recommended to everyone:vi...
newdrive Motor Drive Control(Motor Control)
Has anyone used the E580 GPS?
How is the effect? Is it useful?...
mating85 RF/Wirelessly
STM32 parity check problem
ST has an example configuration as followsUSART_InitStructure.USART_BaudRate = 9600;USART_InitStructure.USART_WordLength = USART_WordLength_8b;USART_InitStructure.USART_StopBits = USART_StopBits_1;USA...
apple0731 stm32/stm8

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2072  1459  1717  1456  2601  42  30  35  53  59 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号