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UR4120

Description
4 A, 1200 V, SILICON, RECTIFIER DIODE, TO-251
Categorysemiconductor    Discrete semiconductor   
File Size349KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet View All

UR4120 Overview

4 A, 1200 V, SILICON, RECTIFIER DIODE, TO-251

RURD4120, RURD4120S
Data Sheet
January 2002
4A, 1200V Ultrafast Diodes
The RURD4120 and RURD4120S are ultrafast diodes with
soft recovery characteristics (t
rr
< 70ns). They have low
forward voltage drop and are silicon nitride passivated
ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and ultrafast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Formerly developmental type TA49036.
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <70ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
o
C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Information
PART NUMBER
RURD4120
RURD4120S
PACKAGE
TO-251
TO-252
BRAND
UR4120
UR4120
Packaging
JEDEC STYLE TO-251
ANODE
CATHODE
CATHODE
(FLANGE)
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252 variant in the tape and reel, i.e.,
RURD4120S9A.
Symbol
K
JEDEC STYLE TO-252
CATHODE
(FLANGE)
A
CATHODE
ANODE
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RURD4120, RURD4120S
UNITS
V
V
V
A
A
A
W
mJ
o
C
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
F(AV)
(T
C
= 152
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
1200
1200
1200
4
8
40
50
10
-65 to 175
©2002 Fairchild Semiconductor Corporation
RURD4120, RURD4120S Rev. B
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