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2SK2140

Description
Power Field-Effect Transistor, 7A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size111KB,8 Pages
ManufacturerNEC Electronics
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2SK2140 Overview

Power Field-Effect Transistor, 7A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

2SK2140 Parametric

Parameter NameAttribute value
MakerNEC Electronics
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)16.3 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (ID)7 A
Maximum drain-source on-resistance1.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)28 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2140, 2SK2140-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2140, 2SK2140-Z is N-channel Power MOS Field Effect
Transistor designed for high voltage switching applications.
3.0 ± 0.3
PACKAGE DIMENSIONS
(in millimeters)
10.6 MAX.
3.6 ± 0.2
10.0
5.9 MIN.
12.7 MIN. 15.5 MAX.
4.8 MAX.
1.3 ± 0.2
FEATURES
Low On-state Resistance
R
DS(on)
= 1.5
MAX. (V
GS
= 10 V, I
D
= 3.5 A)
6.0 MAX.
Low C
iss
C
iss
= 930 pF TYP
.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
c
= 25 ˚C)
Total Power Dissipation (T
A
= 25 ˚C)
Storage Temperature
Channel Temperature
Single Avalanche Current**
Single Avalanche Energy**
*
PW
10
µ
s, Duty Cycle
1 %
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
stg
T
ch
I
AS
E
AS
600
±30
±7.0
±28
75
1.5
150
7.0
16.3
V
V
A
A
W
W
˚C
A
mJ
4
1 2 3
1.3 ± 0.2
0.75 ± 0.1
2.54
0.5 ± 0.2
2.8 ± 0.2
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
(10.0)
4
4.8 MAX.
1.3 ± 0.2
–55 to +150 ˚C
1.0 ± 0.5
8.5 ± 0.2
1.4 ± 0.2
1.5 MAX.
1.0 ± 0.3
(2.54) (2.54)
1 2 3
1.1 ± 0.4
3.0 ± 0.5
**
Starting T
ch
= 25 ˚C, R
G
= 25
Ω,
V
GS
= 20 V
0
R) )
.5 8R
(0 0.
(
0.5 ± 0.2
MP-25Z (SURFACE MOUNT TYPE)
Drain
2.8 ± 0.2
1.
2.
3.
4.
Gate
Drain
Source
Fin (Drain)
Body
Diode
Gate
Source
Document No. TC-2513
(O. D. No. TC-8072)
Date Published February 1995 P
Printed in Japan
©
1995

2SK2140 Related Products

2SK2140 2SK2140-Z
Description Power Field-Effect Transistor, 7A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Power Field-Effect Transistor, 7A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN
Maker NEC Electronics NEC Electronics
package instruction FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown unknown
Avalanche Energy Efficiency Rating (Eas) 16.3 mJ 16.3 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 600 V 600 V
Maximum drain current (ID) 7 A 7 A
Maximum drain-source on-resistance 1.5 Ω 1.5 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-T3 R-PSSO-G2
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 28 A 28 A
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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