EEWORLDEEWORLDEEWORLD

Part Number

Search

MMBTA13-L98Z

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size48KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

MMBTA13-L98Z Overview

Transistor

MMBTA13-L98Z Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)1.2 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)10000
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.35 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)125 MHz
Base Number Matches1
MMBTA13 NPN Darlington Transistor
January 2005
MMBTA13
NPN Darlington Transistor
• This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A.
• Sourced from process 05.
• See MPSA14 for characteristics.
3
2
1
SOT-23
Mark: 1M
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings
Symbol
V
CES
V
CBO
V
EBO
I
C
T
J
, T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
T
a
= 25°C unless otherwise noted
Parameter
Value
30
30
10
Units
V
V
V
A
°C
- Continuous
1.2
-55 to +150
Operating and Storage Junction Temperature Range
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
Off Characteristics
V
(BR)CES
I
CBO
I
EBO
h
FE
V
CE (sat)
V
BE (on)
f
T
Collector-Emitter Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
I
C
= 100µA, I
B
= 0
V
CB
= 30V, I
E
= 0
V
EB
= 10V, I
C
= 0
V
CE
= 5.0V, I
C
=10mA
V
CE
= 5.0, I
C
= 100mA
I
C
= 100mA, I
B
= 0.1mA
I
C
= 100mA,V
CE
= 5.0V
I
C
= 10mA, V
CE
= 10V, f = 100MHz
125
5,000
10,000
1.5
2.0
V
V
30
100
100
V
nA
nA
Parameter
Test Condition
Min.
Max.
Units
On Characteristics *
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Small Signal Characteristics
Current Gain Bandwidth Product
pF
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
MMBTA13 Rev. B

MMBTA13-L98Z Related Products

MMBTA13-L98Z MMBTA13_D87Z MMBTA13-L99Z
Description Transistor trans darl npn 30v 1.2A sot-23 Transistor
Is it Rohs certified? incompatible - incompatible
Reach Compliance Code unknow - unknow
Maximum collector current (IC) 1.2 A - 1.2 A
Configuration DARLINGTON - DARLINGTON
Minimum DC current gain (hFE) 10000 - 10000
JESD-609 code e0 - e0
Maximum operating temperature 150 °C - 150 °C
Polarity/channel type NPN - NPN
Maximum power dissipation(Abs) 0.35 W - 0.35 W
surface mount YES - YES
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 125 MHz - 125 MHz

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 542  1273  1066  1535  354  11  26  22  31  8 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号