tSzmi-Conduckoi ZPioaudi, fine.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
TELEPHONE: (973) 376-2922
2 N 2904/2 N 2905
(212) 227-6005
FAX: (973) 376-8960
USA
2N2906/2N2907
GENERAL PURPOSE AMPLIFIERS AND SWITCHES
DESCRIPTION
The 2N2904, 2N2905, 2N2906 and 2N2907 are si-
licon planar epitaxial PNP transistors in Jedec TO-
39 (for 2N2904, 2N2905) and in Jedec TO-18 (for
2N2906 and 2N2907) metal cases. They are desi-
gned for high-speed saturated switching and gene-
ral purpose applications.
INTERNAL SCHEMATIC DIAGRAM
TO-18
TO-39
mp
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
Ic
Ptot
Parameter
Collector-base Voltage (I
E
= 0)
Collector-emitter Voltage (I
B
= 0)
Emitter-base Voltage (Ic = 0)
Collector Current
Total Power Dissipation at T
am
b < 25 "C
for2N2904 and 2N2905
for2N2906 and 2N2907
at Toase
^
25 °C
Value
-60
-40
-5
-600
0.6
0.4
3
1.8
- 65 to 200
Unit
V
V
V
mA
W
W
W
W
c
c
for2N2904 and 2N2905
for2N2906 and 2N2907
Tstg, Tj
Storage and Junction Temperature
NJ Seini-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information ftirnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NI
Semi-Conductors encourages customers to verify that datasheets are current before plncing orders.
THERMAL DATA
2N2904
2N2905
Rth j-case
Rth j-amb
2N2906
2N2907
97.3 °C/W
437.5
D
C/W
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
58.3 °C/W
292 °CA/V
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C unless otherwise specified)
Symbol
ICBO
ICEX
IBEX
V(BR) CBO
Parameter
Collector Cutoff Current
OE=O)
Collector Cutoff Current
(V
BE
= 0.5 V)
Base Cutoff Current
(V
BE
= 0.5 V)
Colllector-base Breakdown
Voltage (I
E
= 0)
Collector-emitter Breakdown
Voltage (I
B
= 0)
Emittter-base Breakdown
Voltage (l
c
= 0)
Collector-emitter Saturation
Voltage
Base-emitter Saturation
Voltage
DC Current Gain
Test Conditions
VCB = - 50 V
V
CB
=-50V
VCE = - 30 V
VCE = - 30 V
lc = - 1 0 uA
l
c
=- 10 mA
IE =-10 MA
l c = - 150mA IB =- 15mA
I c = - 500 mA I
B
= - 50 mA
l
c
= - 150mA
|
c
= - 500mA
IB =- 16mA
IB =- 50mA
T
amb
=150=C
Min.
Typ.
Max.
-20
-20
-50
-50
Unit
nA
HA
nA
nA
V
V
V
-60
-40
-5
-0.4
-1.6
-1.3
-2.6
20
25
35
40
20
35
50
75
100
30
200
30
8
10
40
80
30
V(BR)CEO*
V(BR) EBO
VCE (sat)*
V
V
V
V
VBE (sat)*
hFE*
for2N2904 and 2N2906
l
c
=-0.1 mA VCE = - 10 V
lc = - 1 mA
VCE = - 10 V
l
c
=-10mA
VCE = - 10V
l c = - 150mA VCE = - 10V
l
c
= - 500mA VCE = - 10V
for 2 N 290 5 and2N2907
l
c
= - 0.1mA
VCE =- 10V
lc = - 1 mA
VCE =- 10 V
lc=-10mA
VCE = - 10V
l
c
= - 150mA VCE = - 10V
l c = - 500mA VCE = - 10V
l
c
=-50mA
f= 100 MHz
i^MHz
1
E
/1°MHZ
v
CE
=
120
hFE*
DC Current Gain
300
MHz
PF
PF
ns
ns
ns
ns
fj
CEBO
CCBO
td
t
r
Transition Frequency
Emitter-base Capacitance
Collector-base Capacitance
_2QV
V
EB
=-2V
VCB =- 1 0 V
Delay Time
Rise Time
Storage Time
Fall Time
ts
tf
!:;-"-5S
!:;.--
1
ssj
v
-=-
3
°
v
l
c
= - 150mA V
CC
= - 6 V
I
B1
= _ |
B2
= _ 15
m
A
l c = - 150mA Vcc = - 6 V
IBI = - IB2 = - 15 mA
Pulsed : pulse duration = 300 (is, duty cyde = 1 %.
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